半导体封装制程与设备材料知识介绍.ppt

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1、半导体封装制程与设备材料知识介绍,半导体封装制程概述,半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）封装后段（MARK-PLANT）测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。,半 导 体 制 程,封装型式概述,IC封装型式可以分为两大类，一为引脚插入型，另一为表面黏着型,封 裝 型 式(PACKAGE),封 裝 型 式,封 裝 型 式,封 裝 型 式,封 裝 型 式,封 裝 型 式,SanDisk Assembly Main Process,Die Cure(Optional),Di

2、e Bond,Die Saw,Plasma,Card Asy,Memory Test,Cleaner,Card Test,Packing for Outgoing,Detaping(Optional),Grinding(Optional),Taping(Optional),WaferMount,UV Cure(Optional),Laser mark,Post Mold Cure,Molding,Laser Cut,Package Saw,Wire Bond,SMT(Optional),半导体设备供应商介绍-前道部分,半导体设备供应商介绍-前道部分,半导体设备供应商介绍,半导体设备供应商介绍,

3、半导体设备供应商介绍,常用术语介绍,SOP-Standard Operation ProcedureFMEA-Failure Mode Effect AnalysisSPC-Statistical Process Control DOE-Design Of ExperimentIQC/OQC-Incoming/Outing Quality ControlMTBA/MTBF-between assit/FailureUPH-Units Per HourCPK-品质参数,晶圆研磨(GRINDING),1.GRINDING 工艺,l 研磨1.研磨分為粗磨與細磨,晶圓粗糙度需小於0.08um.2.細磨

4、厚度在1020um之間,而二次研磨參數中,細磨厚度為15um(二次研磨變更作業膠膜為230um).3.研磨標準厚度:a.HSBGA:1113MIL 標準研磨厚度為 12MILb.PBGA:1116MIL 標準研磨厚度為12MIL.c.LBGA:9.510.5MIL 標準研磨厚度為 10MIL.5.研磨時機器會先量側晶片厚度以此為初始值,粗磨厚度及最終厚度(即細磨要求的厚度).,Spindle1 粗磨,spindle2 細磨,清洗區,離心除水,離心除水,背面朝上,Wafer,研磨時晶圓與SPINDLE轉向,2.Grinding 相关材料A TAPE麦拉B Ginding 砂轮C WAFER CA

5、SSETTLE,工艺对TAPE麦拉的要求：,1。MOUNTNo delamination STRONG2。SAW ADHESIONNo die flying offNo die crack,工艺对麦拉的要求：,3。EXPANDINGTAPE Die distanceELONGATION Uniformity 4。PICKING UPWEAKADHESIONNo contamination,TAPE種類:a.AD WILL D-575 UV膠膜(黏晶片膠膜 白色)厚度 150UMb.AD WILL-295黏晶片膠膜黑色厚度120UMc.AD WILL S-200 熱封式膠帶(去膠膜膠帶)白色 厚

6、度d.FURUKAWA UC-353EP-110AP(PRE-CUT)UV膠膜 白色 厚度110um e.FURUKAWA UC-353EP-110A UV膠膜白色厚110umf.FURUKAWA UC-353EP-110BP UV TAPE 白色厚110um.g.AD WILL G16 P370 黑色厚80UM.h.NITTO 224SP 75UM,3.Grinding 辅助设备A Wafer Thickness Measurement 厚度测量仪 一般有接触式和非接触式光学测量仪两种；B Wafer roughness Measurement 粗糙度测量仪 主要为光学反射式粗糙度测量方式；

7、,4.Grinding 配套设备A Taping 贴膜机B Detaping 揭膜机C Wafer Mounter 贴膜机,Taping 需確認wafer是否有破片或污染或者有氣泡等等現象.特别是VOID；上膠膜後容易發生的defect为龟裂或破片；,切割,正面上膠,上膠,電腦偵測方向,取出,背面朝下,Detaping,lWafer mount,Wafer frame,晶 圓 切 割(Dicing),1.Dicing 设备介绍A DISCO 641/651 系列B ACCERTECH 东京精密200T/300T,Main Sections Introduction,Cutting Area:S

8、pindles(Blade,Flange,Carbon Brush),Cutting Table,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoader Units:Spinner,Elevator,Cassette,Rotation Arm,Blade Close-View,Blade,Cutting WaterNozzle,Cooling Water Nozzle,Twin-Spindle Structure,Rear,Front,X-axis speed:up to 600 mm/sCutting speed:up to 80 mm/s,A Few Concepts,BB

9、D(Blade Broken Detector)Cutter-set:Contact and OpticalPrecision InspectionUp-Cut and Down-CutCut-in and Cut-remain,晶 圓 切 割(Dicing),2.Dicing 相关工艺A Die Chipping 芯片崩角B Die Corrosive 芯片腐蚀C Die Flying 芯片飞片,Wmax,Wmin,Lmax,DDY,DY,規格DY 0.008mmWmax 0.070mmWmin 0.8*刀厚Lmax 0.035,切割時之轉速予切速:a.轉速:指的是切割刀自身的轉速b.切速:

10、指的是Wafer移動速度.,主軸轉速:S1230:3000045000 RPMS1440:3000045000 RPM27HEED:3500045000 RPM27HCCD:3500045000 RPM27HDDC:3500045000 RPM,切割至膠膜時所能切割之深度 UV TAPE:0.100+/-0.005 mm(For Lintec)BLUE TAPE:0.050+/-0.005 mm(For Nitto spv224)G-16 Tape:0.050+/-0.005 mm(For Lintec G-16)UV Tape:0.08+/-0.005mm(For FURUKAWA UC-3

11、53EP-110AP),晶 圓 切 割(Dicing),3.Dicing 相关材料A Tape B Saw BLADE 切割刀C DI 去离子水、RO 纯水,切割刀的規格 因所切產品的特性不同(Wafer材質、厚度、切割道寬度)，所需要的切割刀 規格也就有所不同，其中規格就包括了刀刃長度、刀刃寬度、鑽石顆粒大小、濃度及Nickel bond hardness 軟硬度的選擇，只要任何一種規格的不同，所切 出來的品質也就不一樣。,P4,Saw blade 对製程的影響 Proper Cut Depth Into Tape(切入膠膜的理想深度),分析:理想的切割深度可防止1.背崩之發生。2.切割街区

12、的DDY 理想的切割深度須切入膠膜(Tape)1/3厚度。,P11,切割刀的影響 Diamond Grit Size(鑽石顆粒大小),分析:小顆粒之鑽石1.切割品質較好。2.切割速度不宜太快。3.刀子磨耗較大。大顆粒之鑽石1.刀子磨耗量小。2.切割速度可較快。3.負載電流較小。,P15,TAPE 粘度对SAW製程的影響 Mounting Tape(膠膜黏力),分析:使用較黏膠膜可獲得1.沒有飛 Die。2.較好的切割品質。潛在風險 Die Attach process pick up die 影響。,P10,晶 圓 切 割(Dicing),4.Dicing 辅助设备A CO2 Bubbler

13、二氧化碳发泡机B DI Water 电阻率监测仪C Diamaflow 发生器D UV 照射机,上片(Die Bond),1.Die Bond 设备介绍A ESEC2007/2008 系列B ALPHASEM 8002/9002系列C ASM 829/889/898 系列,上片(Die Bond),2.Die Bond 相关工艺,上片(Die Bond),3.Die Bond 相关材料A LeadframeB SubstrateC Epoxy 银浆D Wafer after SawE Magazine 弹夹,Substrate,Basic Structure:,Core,Au,Ni,Cu,So

14、lder Mask,Bond Finger,Via Hole,Ball Pad,Basic Information,Core：玻璃纤维+树脂mm镀铜层：25um+/-5um镀镍层um镀金层umSolder Mask：25um+/-5um总厚度mmSubstrate Drawing厚度：0.22+/-0.06mmMCEL建议Vendor提供的Substrate厚度：0.24+/-0.04mm,發料烘烤,線路形成(內層),AOI自動光學檢測,壓合,4 layer,2 layer,蝕薄銅,綠漆,線路形成,塞孔,鍍銅,Deburr,鑽孔,鍍Ni/Au,包裝,終檢,O/S電測,成型,AOI自動光學檢測,

15、出貨,BGA基板製造流程,(option),上片(Die Bond),4.Die Bond 辅助设备A 银浆搅拌机 利用公转自转离心力原理脱泡及混合；主要参数有：MIXING/DEFORMING REVOLUTION SPEED 外加计时器；公转用于去泡；自转用于混合；,B Curing Oven 无氧化烤箱主要控制要素：N2 流量；排气量；profile 温度曲线；每箱摆放Magazine 数量；,C Wafer mapping 应用,焊线(Wire Bond),1.Wire Bond 相关工艺 Pad Open&Bond Pad Pitch Ball Size Ball Thickness

16、 Loop height Wire Pull Ball short Crater Test,pad,lead,Free air ball is captured in the chamfer,Free air ball is captured in the chamfer,pad,lead,Free air ball is captured in the chamfer,pad,lead,Free air ball is captured in the chamfer,pad,lead,Free air ball is captured in the chamfer,pad,lead,Form

17、ation of a first bond,pad,lead,Formation of a first bond,pad,lead,Formation of a first bond,pad,lead,heat,PRESSURE,Ultra Sonic Vibration,Formation of a first bond,pad,lead,Ultra Sonic Vibration,heat,PRESSURE,Capillary rises to loop height position,pad,lead,Capillary rises to loop height position,pad

18、,lead,Capillary rises to loop height position,pad,lead,Capillary rises to loop height position,pad,lead,Capillary rises to loop height position,pad,lead,Formation of a loop,pad,lead,Formation of a loop,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead

19、,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,Formation of a second bond,pad,lead,heat,Formation of a second bond,pad,lead,heat,heat,pad,lead,heat,heat,pad,lead,heat,heat,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,pad,lead,Disconnection of the tail,pad,lead,Disconnection of the t

20、ail,pad,lead,Formation of a new free air ball,焊线(Wire Bond),2.Wire Bond 相关材料,Leadfram Capillary Gold Wire,Leadfram,Capillary,Capillary Manufacturer(SPT,GAISER,PECO,TOTO)Capillary Data(Tip,Hole,CD,FA&OR,IC),How To Design Your Capillary,TIP.Pad Pitch Pad pitch x 1.3=TIPHole.Wire Diameter Wire diameter

21、+0.30.5=HCDPad size/open/1st Ball CD+0.4 0.6=1st Bond Ball sizeFA&OR.Pad pitch(um)FA 1000,4 90/1004,8,11 9011,15IC type loop type,Capillary,Gold Wire,Gold Wire Manufacturer(Nippon,SUMTOMO,TANAKA.)Gold Wire Data(Wire Diameter,Type,EL,TS),焊线(Wire Bond),3.Wire Bond 辅助设备A Microscope 用于测loop heightB Wire

22、 Pull 拉力计（DAGE4000）C Ball Shear 球剪切力计D Plasma 微波/等离子清洗计,Ball Size,Ball Thickness,單位:um，Mil 量測倍率:50X Ball Thickness 計算公式 60 um BPP 1/2 WD=50%60 um BPP 1/2 WD=40%50%,Ball Size,Ball Size&Ball Thickness,Loop Height,單位:um，Mil 量測倍率:20X,Loop Height,線長,Wire Pull,1 Lifted Bond(Rejected)2 Break at neck(Refer

23、wire-pull spec)3 Break at wire(Refer wire-pull spec)4 Break at stitch(Refer stitch-pull spec)5 Lifted weld(Rejected),Ball Shear,單位:gram or g/mil Ball Shear 計算公式 Intermetallic（IMC有75%的共晶,Shear Strength標準為6.0g/mil。SHEAR STRENGTHBall Shear/Area(g/mil)Ball Shear=x;Ball Size=y;Area=(y/2)x/(y/2)=z g/mil,P

24、lasma Cleaning的原理：,Plasma的产生：电极(电能)Plasma气体(O2,H2,He,Ar.),Vacuum Chamber,Organic,Plasma,PCB Substrate,Die,+,+,+,+,+,+,+,+,+,+,+,Electrode,+,Plasma Cleaning机理:,等离子工艺Plasma Process,气相-固相表面相互作用 Gas Phase-Solid Phase InteractionPhysical and Chemical分子级污染物去除Molecular Level Removal of Contaminants30 to 30

25、0 Angstroms可去除污染物包括 Contaminants Removed难去除污染物包括 Difficult Contaminants Finger PrintsFluxGross Contaminants,OxidesEpoxySolder Mask,Organic ResiduePhotoresistMetal Salts(Nickel Hydroxide),No Clean(Organic Contamination),Well Cleaned with Plasma,80 o,8 o,Organic Contamination vs Contact Angle,Water Dr

26、op,Chip,Chip,塑封(Molding),Molding设备介绍A TOWA Y1-SERIESB ASA ONEGA 3.8,Towa Auto Mold Training,机器上指示灯的说明：1、绿灯机器处于正常工作状态；2、黄灯机器在自动运行过程中出现了报警提示，但机器不会立即停机；3、红灯机器在自动运行过程中出现了故障，会立即停机，需要马上处理。,机器结构了解正面,Towa Auto Mold Training,机器结构了解背面,CULL BOX 用来装切下来的料饼；OUT MG 用来装封装好的L/F；配电柜用来安装整个模机的电源和PLC，以及伺服电机的SERVO PACK。,Towa Auto Mold Training,模具介绍：,型腔,注塑孔,胶道,模具是由硬而脆的钢材加工而成的。所有的清洁模具的工具必须为铜制品，以免对模具表面产生损伤。严禁使用钨钢笔、cull等非铜材料硬质工具清洁模具。,塑封(Molding),2.Molding相关材料A Compound 塑封胶B Mold Chase 塑封模具,塑封(Molding),3.Molding辅助设备A X-RAY X 射线照射机B Plasma 清洗机,Thanks for watching and listening,The End,