半导体封装制程与设备材料知识介绍-PPT.ppt

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1、半导体封装制程与设备材料知识简介Prepare By：William Guo 2007.11 Update,半导体封装制程概述,半导体前段晶圆wafer制程半导体后段封装测试封装前段（B/G-MOLD）封装后段（MARK-PLANT）测试封装就是將前製程加工完成後所提供晶圓中之每一顆IC晶粒獨立分離，並外接信號線至導線架上分离而予以包覆包装测试直至IC成品。,半 导 体 制 程,封 裝 型 式(PACKAGE),封 裝 型 式,封 裝 型 式,封 裝 型 式,封 裝 型 式,封 裝 型 式,Assembly Main Process,Die Cure(Optional),Die Bond,Di

2、e Saw,Plasma,Card Asy,Memory Test,Cleaner,Card Test,Packing for Outgoing,Detaping(Optional),Grinding(Optional),Taping(Optional),WaferMount,UV Cure(Optional),Laser mark,Post Mold Cure,Molding,Laser Cut,Package Saw,Wire Bond,SMT(Optional),半导体设备供应商介绍-前道部分,半导体设备供应商介绍-前道部分,常用术语介绍,SOP-Standard Operation P

3、rocedure 标准操作手册WI Working Instruction 作业指导书 PM Preventive Maintenance 预防性维护FMEA-Failure Mode Effect Analysis 失效模式影响分析SPC-Statistical Process Control 统计制程控制DOE-Design Of Experiment 工程试验设计IQC/OQC-Incoming/Outing Quality Control 来料/出货质量检验MTBA/MTBF-Mean Time between assist/Failure 平均无故障工作时间CPK-品质参数UPH-U

4、nits Per Hour 每小时产出 QC 7 Tools(Quality Control 品管七工具)OCAP(Out of Control Action Plan 异常改善计划)8D(问题解决八大步骤)ECN Engineering Change Notice(制程变更通知)ISO9001，14001 质量管理体系,前道,后道EOL,Wire Bond引线键合,Mold模塑,Laser Mark激光印字,Laser Cutting激光切割,EVI产品目检,SanDisk Assembly Process Flow SanDisk 封装工艺流程,Die Prepare芯片预处理,ie At

5、tach芯片粘贴,Wafer IQC来料检验,Plasma Clean清洗,Plasma Clean清洗,Saw Singulation切割成型,SMT表面贴装,PMC模塑后烘烤,SMT（表面贴装）-包括锡膏印刷(Solder paste printing),置件(Chip shooting),回流焊(Reflow),DI水清洗(DI water cleaning),自动光学检查(Automatic optical inspection),使贴片零件牢固焊接在substrate上,Die Prepare(芯片预处理)To Grind the wafer to target thickness

6、then separate to single chip-包括来片目检(Wafer Incoming),贴膜(Wafer Tape),磨片(Back Grind),剥膜(Detape),贴片(Wafer Mount),切割(Wafer Saw)等系列工序,使芯片达到工艺所要求的形状,厚度和尺寸,并经过芯片目检(DVI)检测出所有由于芯片生产,分类或处理不当造成的废品.,Wafer tape,Back Grind,Wafer Detape,Wafer Saw,Inline Grinding&Polish-Accretech PG300RM,Transfer,Key Technology:1.Lo

7、w Thickness Variation:+/_ 1.5 Micron2.Good Roughness:+/-0.2 Micron3.Thin Wafer Capacity:Up to 50 Micron4.All-In-One solution,Zero Handle Risk,2.Grinding 相关材料A TAPE麦拉B Grinding 砂轮C WAFER CASSETTLE,工艺对TAPE麦拉的要求：,1。MOUNTNo delamination STRONG2。SAW ADHESIONNo die flying offNo die crack,工艺对麦拉的要求：,3。EXPAN

8、DINGTAPE Die distanceELONGATION Uniformity 4。PICKING UPWEAKADHESIONNo contamination,3.Grinding 辅助设备A Wafer Thickness Measurement 厚度测量仪 一般有接触式和非接触式光学测量仪两种；B Wafer roughness Measurement 粗糙度测量仪 主要为光学反射式粗糙度测量方式；,4.Grinding 配套设备A Taping 贴膜机B Detaping 揭膜机C Wafer Mounter 贴膜机,Wafer Taping-Nitto DR300II,Cut

9、Tape,Taping,Alignment,Transfer,Transfer Back,Key Technology:1.High Transfer Accuracy:+/_ 2 Micron2.High Cut Accuracy:+/-0.2 mm3.High Throughput:50 pcs wafer/Hour4.Zero Void and Zero Wafer Broken,Detaping,lWafer mount,Wafer frame,晶 圓 切 割(Dicing),Dicing 设备:A DISCO 6361 系列B ACCERTECH 东京精密AW-300T,Main S

10、ections Introduction,Cutting Area:Spindles(Blade,Flange,Carbon Brush),Cutting Table,Axes(X,Y1,Y2,Z1,Z2,Theta),OPCLoader Units:Spinner,Elevator,Cassette,Rotation Arm,Blade Close-View,Blade,Cutting WaterNozzle,Cooling Water Nozzle,Die Sawing Disco 6361,Key Technology:,1.Twin-Spindle Structure.2.X-axis

11、 speed:up to 600 mm/s.3.Spindle Rotary Speed:Up to 45000 RPM.4.Cutting Speed:Up to 80mm/s.5.Z-axis repeatability:1um.6.Positioning Accuracy:3um.,Rear,Front,A Few Concepts,BBD(Blade Broken Detector)Cutter-set:Contact and OpticalPrecision InspectionUp-Cut and Down-CutCut-in and Cut-remain,晶 圓 切 割(Dici

12、ng),Dicing 相关工艺A Die Chipping 芯片崩角B Die Corrosive 芯片腐蚀C Die Flying 芯片飞片,Wmax,Wmin,Lmax,DDY,DY,規格DY 0.008mmWmax 0.070mmWmin 0.8*刀厚Lmax 0.035,切割時之轉速予切速:a.轉速:指的是切割刀自身的轉速b.切速:指的是Wafer移動速度.,主軸轉速:S1230:3000045000 RPMS1440:3000045000 RPM27HEED:3500045000 RPM27HCCD:3500045000 RPM27HDDC:3500045000 RPM,晶 圓 切

13、割(Dicing),3.Dicing 相关材料A Tape B Saw BLADE 切割刀C DI 去离子水、RO 纯水,切割刀的規格規格就包括刀刃長度、刀刃寬度、鑽石顆粒大小、濃度及Nickel bond hardness 軟硬度的選擇,P4,Saw blade 对製程的影響 Proper Cut Depth Into Tape(切入膠膜的理想深度),分析:理想的切割深度可防止1.背崩之發生。2.切割街区的DDY 理想的切割深度須切入膠膜(Tape)1/3厚度。,P11,切割刀的影響 Diamond Grit Size(鑽石顆粒大小),分析:小顆粒之鑽石1.切割品質較好。2.切割速度不宜太快

14、。3.刀子磨耗較大。大顆粒之鑽石1.刀子磨耗量小。2.切割速度可較快。3.負載電流較小。,P15,TAPE 粘度对SAW製程的影響 Mounting Tape(膠膜黏力),分析:使用較黏膠膜可獲得1.沒有飛 Die。2.較好的切割品質。潛在風險 Die Attach process pick up die 影響。,P10,晶 圓 切 割(Dicing),4.Dicing 辅助设备A CO2 Bubbler 二氧化碳发泡机B DI Water 电阻率监测仪C Diamonflow 发生器D UV 照射机,Die Attach(芯片粘贴)To attach single die to SMTed

15、substrate-把芯片粘贴到已经过表面贴装(SMT)和预烘烤(Pre-bake)后的基片上,或芯片粘贴到芯片上,并经过芯片粘贴后烘烤(Die Attach Cure)固化粘结剂.,Passive chip(capacitor),Substrate,上片(Die Bond),Die Bond 设备A HITACHI DB700 B ESEC2007/2008 系列C ASM 829/889/898 系列,Die Attach Hitachi DB700,Key Technology:,1.Bonding speed:30ms/die;2.Bonding Accuracy X/Y:25 um;

16、3.Angle Accuracy:0.5 degree;4.Thin Die Pick Up Solution:Up to 2 mils(Electromagnetic,上片(Die Bond),2.Die Bond 相关工艺,上片(Die Bond),3.Die Bond 相关材料A Substrate/Lead frame B Die Attach FilmC Wafer after Saw D Magazine 弹夹,Substrate,Basic Structure:,Substrate Basic Information,Core：玻璃纤维+树脂mm镀铜层：25um+/-5um镀镍层

17、um镀金层umSolder Mask：25um+/-5um总厚度：0.10-0.56mm,發料烘烤,線路形成(內層),AOI自動光學檢測,壓合,4 layer,2 layer,蝕薄銅,綠漆,線路形成,塞孔,鍍銅,Deburr,鑽孔,鍍Ni/Au,包裝,終檢,O/S電測,成型,AOI自動光學檢測,出貨,BGA基板製造流程,(option),上片(Die Bond),4.Die Bond 辅助设备A 银浆搅拌机 利用公转自转离心力原理脱泡及混合；主要参数有：MIXING/DEFORMING REVOLUTION SPEED 外加计时器；公转用于去泡；自转用于混合；,B Curing Oven 无氧

18、化烤箱主要控制要素：N2 流量；排气量；profile 温度曲线；每箱摆放Magazine 数量；,C Wafer mapping 应用,Wire Bond(引线键合)Die to Package InterconnectsHow a die is connected to the package or board.-用金线将芯片上的引线孔和基片上的引脚连接，使芯片能与外部电路相连。在引线键合前需要经过等离子清洗(Pre-Bond Plasma Clean)以保证键合质量,在引线键合后需要经过内部目检(IVI),检测出所有芯片预处理,芯片粘贴和引线键合产生的废品.,Wire Bond K&S

19、Ultra,Key Technology:,1.Die pad opening(Min.):45um.2.Die pads pitch(Min.):60 m.3.Substrate Lead width&Pitch(Min.):40 m&25 m.4.Multi-Loop Selection cover all Package.5.Stack die reverse Bonding to Decrease Total package Thickness.,Die Pad,Substrate Lead,Gold Wire,Capillary,Ultrasonic Power,Heater,Bon

20、d Force,焊线(Wire Bond),1.Wire Bond 相关工艺 Pad Open&Bond Pad Pitch Ball Size Ball Thickness Loop height Wire Pull Ball short Crater Test,焊线(Wire Bond),2.Wire Bond 相关材料,Substrate with die Capillary Gold Wire,How To Design Your Capillary,TIP.Pad Pitch Pad pitch x 1.3=TIPHole.Wire Diameter Wire diameter+0.

21、30.5=HCDPad size/open/1st Ball CD+0.4 0.6=1st Bond Ball sizeFA&OR.Pad pitch(um)FA 1000,4 90/1004,8,11 9011,15IC type loop type,Capillary,Gold Wire,Gold Wire Manufacturer(Nippon,SUMTOMO,TANAKA.)Gold Wire Data(Wire Diameter,Type,EL,TS),焊线(Wire Bond),3.Wire Bond 辅助设备A Microscope 用于测loop heightB Wire Pu

22、ll 拉力计（DAGE4000）C Ball Shear 球剪切力计D Plasma 微波/等离子清洗计,Ball Size,Ball Thickness,單位:um，Mil 量測倍率:50X Ball Thickness 計算公式 60 um BPP 1/2 WD=50%60 um BPP 1/2 WD=40%50%,Ball Size,Ball Size&Ball Thickness,Loop Height,單位:um，Mil 量測倍率:20X,Loop Height,線長,Wire Pull,1 Lifted Bond(Rejected)2 Break at neck(Refer wir

23、e-pull spec)3 Break at wire(Refer wire-pull spec)4 Break at stitch(Refer stitch-pull spec)5 Lifted weld(Rejected),Ball Shear,單位:gram or g/mil Ball Shear 計算公式 Intermetallic（IMC有75%的共晶,Shear Strength標準為6.0g/mil。SHEAR STRENGTHBall Shear/Area(g/mil)Ball Shear=x;Ball Size=y;Area=(y/2)x/(y/2)=z g/mil,等离子工

24、艺Plasma Process,气相-固相表面相互作用 Gas Phase-Solid Phase InteractionPhysical and Chemical分子级污染物去除Molecular Level Removal of Contaminants30 to 300 Angstroms可去除污染物包括 Contaminants Removed难去除污染物包括 Difficult Contaminants Finger PrintsFluxGross Contaminants,OxidesEpoxySolder Mask,Organic ResiduePhotoresistMetal

25、Salts(Nickel Hydroxide),Plasma Clean March AP1000,Key Technology:,1.Argon Condition,No oxidation.2.Vacuum Pump dust collector.3.Clean Level:blob Test Angle 8 Degree.,Plasma,PCB Substrate,Die,+,+,+,+,+,+,+,+,+,+,+,Electrode,+,Ar,Well Cleaned with Plasma,8 o,Chip,Ar,Ar,No Clean(Organic Contamination),

26、Well Cleaned with Plasma,80 o,8 o,Organic Contamination vs Contact Angle,Water Drop,Chip,Chip,Mold(模塑)To mold strip with plastic compound then protect the chip to prevent from damaged-塑封元件的线路，以保护元件免受外力损坏，同时加强元件的物理特性,便于使用.在模塑前要经过等离子清洗(Pre-Mold Plasma Clean),以确保模塑质量.在模塑后要经过模塑后固化(Post Mold Cure),以固化模塑料

27、.,塑封(Molding),Molding设备A TOWA YPS&Y-SeriesB ASA OMEGA 3.8,机器上指示灯的说明：1、绿灯机器处于正常工作状态；2、黄灯机器在自动运行过程中出现了报警提示，但机器不会立即停机；3、红灯机器在自动运行过程中出现了故障，会立即停机，需要马上处理。,机器结构了解正面,机器结构了解背面,CULL BOX 用来装切下来的料饼；OUT MG 用来装封装好的L/F；配电柜用来安装整个模机的电源和PLC，以及伺服电机的SERVO PACK。,塑封(Molding),2.Molding相关材料A Compound 塑封胶B Mold Chase 塑封模具,模具介绍：,模具是由硬而脆的钢材加工而成的。所有的清洁模具的工具必须为铜制品，以免对模具表面产生损伤。严禁使用钨钢笔、cull等非铜材料硬质工具清洁模具。,塑封(Molding),3.Molding辅助设备A X-RAY X 射线照射机-用于Mold 后对于产品的检查B Plasma 清洗机-作用原理和WB 前的相同；,Thanks for watching and listening,The End,