模拟电路分析与设计英文pptch.ppt
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1、Huazhong University of Science and TechnologyThe Department of Electronics and Information Engineering,First Term 08/09,Electronic Circuit Analysis and Design,Dr.Tianping Deng,PART 1SEMICONDUCTOR DEVICES AND BASIC APPLICATIONSChapter 1Semiconductor Materials and DiodesChapter 2Diode CircuitsChapter
2、3The Field-Effect TransistorChapter 4Basic FET AmplifiersChapter 5The Bipolar Junction TransistorChapter 6Basic BJT AmplifiersChapter 7Frequency ResponseChapter 8Output Stages and Power AmplifiersPART 2ANALOG ELECTRONICSChapter 9Ideal Operational Amplifiers and Op-Amp CircuitsChapter 10Integrated Ci
3、rcuit Biasing and Active LoadsChapter 11Differential and Multistage AmplifiersChapter 12Feedback and StabilityChapter 13Operational Amplifier CircuitsChapter 14Nonideal Effects in Operational Amplifier CircuitsChapter 15Applications and Design of Integrated Circuits,Contents,Ch1.Semiconductor Materi
4、als and Diodes,1.1 Semiconductor Materials and Properties,1.2 The PN Junction,1.4 Diode Circuits AC Equivalent Circuit,1.3 Diode Circuits DC Analysis and Models,1.5 Other Diode Types,1.6 Design Application:Diode Thermometer,1.7 Summary,1.1 Semiconductor Materials and Properties,1.1.1 Intrinsic Semic
5、onductor,1.1.2.Extrinsic Semiconductor,N-type semiconductor,P-type semiconductor,Ch1.Semiconductor Materials and Diodes,1.1 Semiconductor Materials and Properties,Materials,ConductorInsulatorSemiconductor,:conduction electrons_electrical conductivity,:electrons in bonding mechanism _cannot move,:sil
6、icon,germanium,gallium arsenide,1.1.1.Intrinsic Semiconductor,Silicon Valley,1.1.1 Intrinsic Semiconductor,1.Silicon,germanium_single-crystal structure,At temperature T=0oK,silicon is an insulator.,1.1.1 Intrinsic Semiconductor,Each Si atom shares one electron with each of its four closest neighbors
7、 so that its valence band will have a full 8 electrons.,1.1.1 Intrinsic Semiconductor,2.When T increases,free electrons and“holes”are created,In pure semiconductor,the concentration of electrons and holes are equal,and very small,so it has very small conductivity.,Increasing temperature,generating e
8、lectron-hole pairs,Free electron-produced by thermal ionization.It can move freely in the lattice structure so as to form current.Hole-empty position in broken covalent bond.It can be filled by free electron(recombination)and can also“move”freely to form current.,Carriers,A free electron is negative
9、 charge and a hole is positive charge.,1.1.1 Intrinsic Semiconductor,A hole can be regarded as a positive charge carrier,Does the hole can move through the crystal freely?,1.1.2.Extrinsic Semiconductor,1.phosphorus+silicon=N-type semiconductor,Holes present because of thermal energy,What are the maj
10、ority carriers in n-type materials?What are the minority carriers in n-type materials?,N-type semiconductor material(phosphorus)donor:provide free electrons majority carrier electrons minority carrier holes,Doped Semiconductorn type,Donor,Free E,bound charge,Donor-pentavalent impurity provides free
11、electrons,usually entirely ionized.Positive bound charge-impurity atom donating electron gives rise to positive bound charge.Majority carriers-free electrons(mostly generated by ionized donor and a very tiny portion by thermal ionization).Minority carriers-holes(only generated by thermal ionization)
12、.,n type Semiconductor,1.1.2.Extrinsic Semiconductor,What are the majority carriers in P-type materials?What are the minority carriers in P-type materials?,2.boron+silicon=P-type semiconductor,P-type semiconductor material(Boron)acceptor:accept an extra electrons majority carrier holes minority carr
13、ier electrons,Doped Semiconductorp type,Boundcharge,Hole,Acceptor,Acceptor-trivalent impurity provides holes,usually entirely ionized.Negative bound charge-impurity atom accepting hole give rise to negative bound chargeMajority carriers-holes(mostly generated by ionized acceptor and a tiny small por
14、tion by thermal ionization)Minority carriers-free electrons(only generated by thermal ionization.),p type Semiconductor,1.1.2.Extrinsic Semiconductor,2.boron+silicon=P-type semiconductor,1.phosphorus+silicon=N-type semiconductor,Positive Charges+holes=electrons,Negative Charges+electrons=holes,major
15、ity carrier,minority carrier,Doping,Temperature,majority carrier,Doping,minority carrier,Temperature,Majority carrier is only determined by the impurity,but independent of temperature.Minority carrier is strongly affected by temperature.If the temperature is high enough,characteristics of doped semi
16、conductor will decline to the one of intrinsic semiconductor.,Conclusion on the doped semiconductor,1.1.2.Extrinsic Semiconductor,Diffusion:a concentration of charge carriers tends to spread with time,1.1.2.Extrinsic Semiconductor,Diffusion:a concentration of charge carriers tends to spread with tim
17、e,Drift:The average motion of the charge carriers due to an applied electric field.,1.2 The PN Junction,1.2.1 The Equilibrium PN Junction,1.2.2 Forward-Biased PN Junction,1.2.3 Reverse-Biased PN Junction,1.2.4 PN Junction Diode,1.2 The PN Junction,1.2.1 The Equilibrium PN Junction,N,P,hole,Electron,
18、Holes diffuse from P-to N-region.Electrons diffuse from N-to P-region,1.2 The PN Junction,1.2.1 The Equilibrium PN Junction,1.Depletion region(space-charge region)_PN junction,Electric field,2.Electric field,N,P,1.2.1 The Equilibrium PN Junction,3.Drift current IDR=diffusion current IDF _Balance,1.D
19、epletion region(space-charge region)_PN junction,2.Electric field,IDF,IDR,N,P,1.2.1 The Equilibrium PN Junction,The procedure of forming pn the dynamic equilibrium of drift and diffusion movements for carriers in the silicon.In detail,there are 4 steps:DiffusionSpace charge regionDriftEquilibrium,1.
20、2.2 Forward-Biased PN Junction,Positive voltage is applied to P,forward-biased PN.,1.Depletion region is reduced,low resistance.,2.Majority carriers flow across PN junction more easily.IDFIDR,iD=IDFIDR,vD,The two fields are opposite.The results are:,1.2.2 Forward-Biased PN Junction,1.2.2 Forward-Bia
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