Single Photon Detectors单光子探测器.ppt
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1、Single Photon Detectors,By:Kobi CohenQuantum Optics Seminar25/11/09,Outline,A brief review of semiconductorsP-type,N-typeExcitationsPhotodiodeAvalanche photodiodeGeiger ModeSilicon Photomultipliers(SiPM)PhotomultiplierSuperconducting WireCharacterization of single photon sourcesHBT ExperimentSecond
2、order correlation function,Semiconductors,Semiconductors,electrons and“holes”:negative and positive charge carriesEnergy-momentum relation of free particles,with different effective mass,Semiconductors,Thermal excitations make the electrons“jump”to higher energy levels,according to Fermi-Dirac distr
3、ibution:,Semiconductors,Excitations can also occur by the absorption of a photon,which makes semiconductors suitable for light detection:,Energy conservationMomentum conservationphoton momentum is negligible k2k1useful to remember:,Intrinsic Semiconductors,Charge carriers concentration in a semicond
4、uctor without impurities:,N-type Semiconductor,Some impurity atoms(donors)with more valence electrons are introduced into the crystal:,P-type Semiconductor,Some impurity atoms(acceptors)with less valence electrons are introduced into the crystal:,The P-N Junction,Electrons and holes diffuse to area
5、of lower concentrationElectric field is built up in the depletion layerDrift of minority carriersCapacitance,Biased P-N junction,When connected to a voltage source,the i-V curve of a P-N junction is given by:,Well focus on reverse biasing:larger electric field in the junctionextended space charge re
6、gion,The P-N photodiode,Electrons and holes generated in the depletion area due to photon absorption are drifted outwards by the electric field,The P-N photodiode,The i-V curve in the reverse-biased P-N junction is changed by the photocurrent,Reverse biasing:Electric field in the junction increases
7、quantum efficiencyLarger depletion layerBetter signal,The P-I-N junction,Larger depletion layer allows improved efficiencySmaller junction capacitance means fast response,Detectors:Quantum Efficiency,The probability that a single photon incident on the detector generates a signal,Losses:reflectionna
8、ture of absorption a fraction of the electron hole pairs recombine in the junction,Detectors:Quantum Efficiency,Wavelength dependence of:,Summary:P-N photodiode,Simple and cheap solid state deviceNo internal gain,linear responseNoise(“dark”current)is at the level of several hundred electrons,and con
9、sequently the smallest detectable light needs to consist of even more photons,Avalanche photodiode,High reverse-bias voltage enhances the field in the depletion layerElectrons and holes excited by the photons are accelerated in the strong field generated by the reverse bias.Collisions causing impact
10、-ionization of more electron-hole pairs,thus contributing to the gain of the junction.,Avalanche photodiode,P-N photodiode,Avalanche photodiode,Summary:APD,High reverse-bias voltage,but below the breakdown voltage.High gain(100),weak signal detection(20 photons)Average photocurrent is proportional t
11、o the incident photon flux(linear mode),Geiger mode,In the Geiger mode,the APD is biased above its breakdown voltage for operation in very high gain.Electrons and holes multiply by impact ionization faster than they can be collected,resulting in an exponential growth in the currentIndividual photon
12、counting,Geiger mode quenching,Shutting off an avalanche current is called quenchingPassive quenching(slower,10ns dead time)Active quenching(faster),Summary:Geiger mode,High detection efficiency(80%).Dark counts rate(at room temperature)below 1000/sec.Cooling reduces it exponentially.After-pulsing c
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