SilvacoTCAD工艺仿真.ppt

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1、Silvaco TCAD 工艺仿真（二）,Tang shaohua,SCU,*,1,Silvaco学习,上一讲知识回顾,熟悉仿真流程,*,2,Silvaco学习,1、建立仿真网格2、仿真初始化3、工艺步骤4、抽取特性5、结构操作6、Tonyplot显示,go athenaLine x loc=0.0 spac=0.02Line x loc=1.0 spac=0.10Line y loc=0.0 spac=0.02Line y loc=2.0 spac=0.20init two.dDiffuse time=30 temp=1200 dryo2extract name=Tox thickness

2、oxide mat.occno=1 x.val=0tonyplot quit,小试牛刀之Diffuse做氧化,优化,这一讲的安排,介绍各个工艺的参数及其意义举例说明这些工艺有：离子注入，扩散，淀积，刻蚀，外延和抛光,*,Silvaco学习,3,离子注入,命令implant，参数及说明如下：,*,4,Silvaco学习,离子注入的参数及说明,*,5,Silvaco学习,离子注入的几何说明：注入面：表面：仿真面：Tilt angle：Rotation angle：,离子注入的例句,*,6,Silvaco学习,Implant phosph dose=1e14 energy=100 tilt=15,I

3、mplant boron dose=1e13 energy=50 tilt=0 s.oxide=0.005,Implant boron dose=1e13 energy=300 bca tilt=0 rotation=0,Analytical 注入：,SVDP注入（s.oxide为屏氧厚度）：,Monte Carlo注入：,Implant boron dose=1e14 energy=50 unit.damage dam.factor=0.1,注入损伤：,离子注入的例子,*,7,Silvaco学习,go athenaLine x loc=0.0 spac=0.02Line x loc=1.0

4、spac=0.10Line y loc=0.0 spac=0.02Line y loc=2.0 spac=0.20init silicon c.boron=1e16 two.dImplant phosph dose=1e13 energy=50 tilt=7 unit.damage dam.factor=0.05extract name=xj xj material=Silicon”mat.occno=1 x.val=0.05 junc.occno=1tonyplot,抽取得到结深 Xj0.267678m,把spac=0.02 换成0.1看有什么不同,扩散,命令diffuse，参数及说明如下：

5、,*,8,Silvaco学习,扩散的例句,*,9,Silvaco学习,Diffuse time=1 hour temp=1000 c.boron=1e20,Diffuse time=30 temp=1200 weto2,Diffuse time=2 temp=800 t.final=1200 nitro press=2Diffuse time=20 temp=1200 nitro press=2Diffuse time=2 temp=1200 t.final=800 nitro press=2,Diffuse time=1 temp=1000 nitro press=1.5,磷的预沉积：,湿氧

6、氧化（也可以定义气流）：,变温扩散：,快速热退火（RTA）：,高级的扩散模型：,Method plsDiffuse time=1 hour temp=950 nitro c.phos=1e20 tsave=1 tsave.mult=10 dump.predep=predep,扩散的例子,*,10,Silvaco学习,go athenaLine x loc=0.0 spac=0.02Line x loc=1.0 spac=0.10Line y loc=0.0 spac=0.1Line y loc=2.0 spac=0.20init silicon c.boron=1e16 two.dMethod

7、 plsDiffuse time=1 hour temp=950 nitro c.phos=1e20 tsave=1 tsave.mult=10 dump.prefix=predeptonyplot predep*.strtonyplot-overlay predep*.str,淀积,命令deposit。参数及其说明如下：,*,11,Silvaco学习,淀积参数及例句,*,12,Silvaco学习,Deposit oxide thick=0.1 dy=0.01 ydy=0.05,Deposit oxide thick=0.1 div=10,淀积，网格控制：,Deposit material=B

8、PSG thick=.1 c.boron=1e20 c.phos=1e20,淀积BPSG：,Rate.depo machine=MOCVD cvd dep.rate=0.1 u.m step.cov=0.75 tungstenDeposit machine=MOCVD time=1 minute,淀积，网格控制：,淀积的例子（网格）,*,13,Silvaco学习,go athenaLine x loc=0.0 spac=0.02Line x loc=1.0 spac=0.10Line y loc=0.0 spac=0.02Line y loc=2.0 spac=0.20init silicon

9、 c.boron=1e16 two.dtonyplot,Deposit oxide thick=0.1 dy=0.01 ydy=0.05,刻蚀,命令etch，参数有：,*,14,Silvaco学习,刻蚀参数及其说明,*,15,Silvaco学习,等离子体刻蚀,RIE和湿法刻蚀,刻蚀参数及其说明,*,16,Silvaco学习,Monte Carlo等离子刻蚀,参数Isotropic只是一个速率，等方向性的速率。,简单的例句,*,Silvaco学习,17,go athenaLine x loc=0.0 spac=0.02Line x loc=1.0 spac=0.10Line y loc=0.0

10、spac=0.02Line y loc=2.0 spac=0.20init c.boron=1e16 two.ddeposit oxide thick=0.1 div=10deposit silicon thick=0.5 div=10structure outfile=origin.strEtch silicon left p1.x=0.5 go athena init infile=origin.strEtch silicon allstructure outfile=etch_all.strtonyplot origin.str etch_p1x_0.5.str etch_all.str

11、,刻蚀的例子,*,Silvaco学习,18,go athenaLine x loc=0.0 spac=0.05Line x loc=2.5 spac=0.02Line x loc=5.0 spac=0.05Line y loc=0.0 spac=0.02Line y loc=2.0 spac=0.20init c.boron=1e16 two.ddeposit oxide thick=0.5 div=10structure outfile=mask.strtonyplot mask.str,Etch oxide start x=1.5 y=0.0Etch continue x=1.5 y=-0

12、.6Etch continue x=3.5 y=-0.6Etch done x=3.5 y=0.0,后面刻蚀的例子中掩膜即由此得到,刻蚀的例子,*,Silvaco学习,19,go athenainit infile=mask.stretch.tonyplot,刻蚀的例子,*,20,Silvaco学习,go athenainit infile=mask.stretch.tonyplot,外延,外延的命令epitaxy，参数及其说明如下：,*,21,Silvaco学习,外延的例子,*,Silvaco学习,22,go athenainit infile=mask.strEpitaxy Structu

13、re outfile=Tonyplot*.str,外延是硅的外延！,抛光,抛光的命令polish，参数及说明如下：,*,Silvaco学习,23,抛光的例子,*,Silvaco学习,24,go athenainit infile=mask.strRate.polish oxide machine=cmp u.m max.hard=0.15 min.hard=0.03 isotropic=0.001Polish machine=cmp time=4 minstructure outfile=polish.strtonyplot mask.str polish.str,光刻,光刻的步骤及参数很多如

14、mask，illumination，projection，filter，layout，Image，bake，expose和develop下一讲再讲解光刻工艺,*,Silvaco学习,25,本讲回顾,介绍了离子注入，扩散，淀积，刻蚀，外延和抛光的工艺仿真。给出详实的参数说明及例句例子。通过例子希望大家能体会到：网格的重要性适当的空行和缩进以及注释以增强可读性学会用“Init infile=*.str”时刻留意输出窗口的信息,*,Silvaco学习,26,下一讲安排,介绍光刻工艺工艺集成工艺仿真部分答疑,*,Silvaco学习,27,谢谢！,*,28,Silvaco学习,交流时间,*,29,Silvaco学习,