材料表征教学资料spm.ppt
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1、1,Scanning Probe Microscope,Scanning Tunneling Microscope Atomic Force Microscope,2,Scanning Tunneling Microscope,Basic conceptsTunneling currentLocal barrier heightMore physicsApplications,Iron atoms adsorbed on a copper(111)surface forming a“quantum corral”in a very low temperature(4K).,3,Basic Co
2、ncepts,The basic principle of scanning tunneling microscopy(STM)is based on the tunneling current between a metallic tip,which is sharpened to a single atom point and is made of a conducting material.A small bias voltage(mV to 3 V)is applied between an atomically sharp tip and the sample.If the dist
3、ance between the tip and the sample is large no current flows.However,when the tip is brought very close(10)without physical contact,a current(pA to nA)flows across the gap between the tip and the sample.,4,Basic Concepts,Such current is called tunneling current which is the result of the overlappin
4、g wavefunctions between the tip atom and surface atom,electrons can tunnel across the vacuum barrier separating the tip and sample in the presence of small bias voltage.The magnitude of tunneling current is extremely sensitive to the gap distance between the tip and sample,the local density of elect
5、ronic states of the sample and the local barrier height.The density of electronic states is the amount of electrons exist at specific energy.As we measure the current with the tip moving across the surface,atomic information of the surface can be mapped out.,5,How STM works?,Although the STM itself
6、does not need vacuum to operate(it works in air as well as under liquids),ultrahigh vacuum is required to avoid contamination of the samples from the surrounding medium.,6,Tunneling Current,To understand the theory of how STM works,it is vital to know what is tunneling current,and how it relates to
7、all the experimental observations.Tunneling current is originated from the wavelike properties of particles(electrons,in the case)in quantum mechanics.When an electron is incident upon a vacuum barrier with potential energy larger than the kinetic energy of the electron,there is still a non-zero pro
8、bability that it may traverse the forbidden region and reappear on the other side of the barrier.,7,Tunneling Current,It is shown by the leak out electron wave function in the picture below.,8,Tunneling Current,If two conductors are so close that their leak out electron wave functions overlap.The el
9、ectron wave functions at the Feimi level have a characteristic exponential inverse decay length K given by m is the mass of electron,is the local tunneling barrier height or the average work function of the tip and sample.,9,Simple Calculations,E2,E1,x,0,x0,x0,10,Simple Calculations,Solution of thes
10、e equations comes out as:,x0,x0,where,and,After rearrangement,one obtains,x0,x0,;,A,B,C and D are constants.,11,Simple Calculations,Since both,and,should continue at x=0,C and D can be expressed using B by:,At the positive infinity,thus A=0.,The last constant B can be determined by,.,12,Wave Functio
11、n Leak out,Actually,the constants are not important.What really matters is that the wave function decays exponentially when x0.When x0 is the vacuum and x0 is a metal,the kinetic energy of electrons is the Feimi energy of this metal and E1 is the energy of vacuum,then where is the work function of t
12、he metal.,13,Tunneling Current,The overlapped electron wave function in the vacuum from both the sample and the tip permits quantum mechanical tunneling and a current,I will flow across the vacuum gap.,14,More Physics,Based on the Bardeens tunneling current formalism where,V is the applied voltage,M
13、TS the tunneling matrix element between the tip wave function T and the sample surface wave functions,ET and Es the energy of a state in the absence of tunneling.,is the Feimi function,15,More Physics,The matrix element MTS is obtained fromFor small tunneling voltages and low temperature,f(E)can be
14、expanded to obtain,the integral is taken over a surface lying entirely within the vacuum barrier region between the tip and the sample.,16,More Physics,In particular,if the tip and sample are identical materials,the wave functions in the vacuum gap can be written as,is the inverse decay length,is th
15、e local barrier height.,Therefore,the tunneling current exhibits an exponential dependence on the separation d given by,17,More Physics,With the spherical tip configuration shown in the picture,the surface wave functions can be expanded in plane waves parallel to the surface with decaying amplitude
16、into the vacuum,where s is the sample volume,K is inverse decay length,k is the surface wavevector and G is a two-dimensional reciprocal lattice vector of the surface.The first few factors aG are typically of the order unity.,18,More Physics,The spherical tip(R k-1)wave function are expanded in simi
17、lar form where T is the probe volume and R is the radius of curvature of the tip.The resulting matrix elements where r0 is center of the curvature of the tip.,19,More Physics,Therefore,the tunneling current is where DT(EF)is the tip density of states per unit volume.Divide the current by bias voltag
18、e,conductance is obtained as,20,Tunneling Current,At low voltage and temperature d is the distance between tip and sample.If the distance increased by 1 Angstrom,the current flow decreased by an order of magnitude,so the sensitivity to vertical distance is terribly high.As the tip scans across the s
19、urface,it gives atomic resolution image.,21,Remember!,STM does NOT probe the nuclear position directly,but rather it is a probe of the electron density.So STM images do not always show the position of the atoms,and it depends on the nature of the surface and the magnitude and sign of the tunneling c
20、urrent.,22,Local Barrier Height,It is obvious that the current is exponentially depends on both gap distance and the local barrier height,change of current might be due to corrugation of the surface or to the locally varying local barrier height.The two effects can be separated by the relationship.,
21、23,Local Barrier Height,The tip is vibrating vertically and the current is measured,in theory,the local barrier height can be calculated.Again,if the tip rasters the surface,map of local barrier height can be obtained.However,the local barrier image also contain topographic features,some questions r
22、elated to the local barrier have so far remained unexplained.So,extra care needs to be taken in performing such experiments.,24,Local Density of States(LDOS),Density of States(DOS)represents the amount of electrons exist at specific values of energy.The tunneling conductance(or I/V),is proportional
23、to the LDOS.where(r0,E)is the local density of states of the sample.,25,Local Density of States(LDOS),Keeping the gap distance constant,measure the current change with respect to the bias voltage can probe the LDOS of the sample.Moreover,changing the polarity of bias voltage can get local occupied a
24、nd unoccupied states.,26,Local Density of States(LDOS),When the tip is negatively biased,electrons tunnel from the occupied states of the tip to the unoccupied states of the sample.,27,Local Density of States(LDOS),If the tip is positively biased,electrons tunnel from the occupied states of sample t
25、o the unoccupied states of the tip.,28,An example,Here are the spectra for Si(111)-7 x 7 surface.The bottom spectrum is the area averaged tunneling conductance measured by STM,and the top spectrum is the surface states spectrum measures photoemission and inverse photoemission.both spectra show simil
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