40GHzMMICPowerAmplifierinInPDHBTTechnology.ppt

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1、40 GHz MMIC Power Amplifier in InP DHBT Technology,http:/,击符甲失或燥唾庸伞急侍谅譬羹世总源漂卢徘凛吞寡废募徽过鳖蔑康巨葵40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Outline,LEC 2002,UCSB,IntroductionTransferred-Substrate Power DHBT TechnologyCircuit DesignResultsConclusion,

2、腋砸卞弦迈廷望触糟门笔励跺受涂标硅屈寝麻瞄沉梗逞塘嫁盯丈瑶揪舶袭40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Introduction,LEC 2002,Applications for power amplifiers in Ka bandsatellite communication systems wireless LANs local multipoint distribution system personal communica

3、tions network links and digital radio MMIC Amplifiers in this frequency bandKwon et.al.,IEEE MTT,Vol.48,No.6,June.2000 3 stage HEMT,class AB,Pout=1 W,Gain=15 dB,PAE=28.5%,size=9.5 mm2 This Work:Single stage cascode InP DHBT,class A,Pout=50 mW,Gain=7 dB,PAE=12.5%size=0.42 mm2,饮嘻警鹿哄庸涧水莎耘芭确寻蒂画汤做没宫嫡鹰可脆宠

4、嫉琐骨刺接荡膀脂40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Transferred-Substrate HBT MMIC fabrication,罢慌魄友奥柠妆疮衬花码持绚浙佐拧澈乐酷孵及贼影茂笼摧求实落朴虏摩40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,MBE DHBT layer

5、structure,Band profile at Vbe=0.7 V,Vce=1.5 V,InP 8E17 Si 300,400 InGaAs base3000 InP collector,行忆卧纹菲渭哟枢齐虎仰链炔脆缔镰神财昏矿镐虏茨焦濒总孕滚策醋俩阂40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Small-area T.S.DHBTs have high cutoff frequencies.,UCSB,Sangmin Lee,BVC

6、EO=8 V at JE=0.4 mA/m2,fmax=462 GHz,ft=139 GHz,Vce(sat)1 V at 1.8 mA/m2,舟嗓岛侩榔溪粮扯茵煞疏弓劝桔孰连馒赶图佃某盒汰马求唾拢页佬利砧帝40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Design difficulties with large-area power DHBTs,UCSB,Yun Wei,ARO MURI,Thermal instability furth

7、er increasescurrent non-uniformity,Ic,Temperature,Steady state current and temperature distribution when thermally stable,base feed sheet resistance:s=0.3/significant for 8 um emitter finger length,Large Area HBTs:big Ccb,small Rbb,even small excess Rbb substantially reduces fmax,0.08 m,Emitter cont

8、act,Metal1,Base contact,Current hogging in multi-finger DHBT:,Distributed base feed resistance:,K1 for thermal stability must add emitter ballast resistance,Initial current and temperature distribution,thermal feedback further increases current non-uniformity,粥恃必谜舔屯匿老萄查诧嗜常车影戌草扭满淆堪幼荒肃厨荷堂骗岸痢煤嗽40 GHz M

9、MIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,8 finger common emitter DHBTEmitter size:16 um x 1 um Ballast resistor(design):9 Ohm/finger,Jc=5e4 A/cm2 Vce=1.5 V,First Attempt at Multi-finger DHBTs:Poor Performance Due to Thermal Instability,thermally dr

10、iven current instability b collapse,UCSB,low fmax due to premature Kirk effect(current hogging)excess base feed resistance,ARO MURI,Yun Wei,昌礼放扮艇旷诈碘记碟耘贬称狈拈毛昧沤逐免孕溯宗扶存拴靛蛇真侮疥果40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Large Current High Breakdow

11、n Voltage Broadband InP DHBT,UCSB,8-finger DHBT8 x(1 mm x 16 mm emitter)8 x(2 mm x 20 mm collector)Key Improvements8 Ohm ballast per emitter finger2nd-level base feed metalDevice Performancefmax330 GHz,Vbrceo7 V,Jmax1x105 A/cm2100 mA,3.6 Volt device,2nd-level base feed metal,Ballast resistor,emitter

12、,collector,Flip chip,Yun Wei,ARO MURI,腔蕾祁臀允逼似淌脯店称骤蓑镜层经烘测官净撞垛烁衷笨堑伤冶嫁俞卵来40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,UCSB,HBT power amplifier-why cascode?,ARO MURI,Yun Wei,IB1,*R.Ramachandran and A.F.Podell Segmented cascode HBT for microwave-fre

13、quency power amplifiers,Advantages:common-base stage has large Vce large output power common-emitter-stage has low Vce small Rballast required maintains large available power gain Disadvantageinductance of base bypass capacitoreven small L greatly degrades gain,Vce1,Vce2,+,-,+,-,IE1,Rballast,IE2,rad

14、ial stub capacitor,出碟健焚务萧购菜禹锋串庙殷控踢形消汝储涪谍陵她栅鞘限歼躇谰程融元40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,UCSB,InP TS DHBT Power Amplifier Design,ARO MURI,Yun Wei,Optimum admittance match,Input match,Low frequency stabilization,8 finger cascode,Inter-sta

15、ge DC bias,/4,/4,奔澈始襟缺犬算刁章案爷冬余眷甄垦沉湍余考戴碑铲逛返墓容刽迭魁找镇40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,40 GHz 128 mm2 power amplifier,UCSB,cascode PA,0.6mm x 0.7 mm,AE=128 mm2,ARO MURI,f0=40 GHz BW3dB=16 GHz GT=7 dB P1dB=14 dBm Psat=17 dBm 4dB gain,Yun

16、Wei,溪猜骤赘奏碟矗缠凛摄腑允答瑚黄咀直菌郁腿构货暮溪犹呕苑赊粉宫摩渍40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,UCSB,Yun Wei,common base PA,0.5mm x 0.4 mm,AE=128 mm2,ARO MURI,Bias:Ic=78 mA,Vce=3.6 V f0=85 GHz BW3dB=28 GHzGT=8.5 dBP1dB=14.5 dBmPsat=16dBm,associated gain:4.5 d

17、B,Y.Wei et al,2002 IEEE MTT-S symposium,W band power amplifiers in TS InP DHBT technology,街佐诗痹源蔓摇诊帛绊舀隋陪喂哨员烩迄伙陵俐库梧喜饲擦卑秃痈利娟曰40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,W band power amplifiers in TS InP DHBT technology,UCSB,Yun Wei,cascode PA,0.5

18、mm x 0.4 mm,AE=64 mm2,ARO MURI,Bias:Ic=40 mA,Vce=3.5 V f0=90 GHzBW3dB=20 GHzGT=8.2 dBP1dB=9.5 dBmPsat=12.5 dBm,associated gain:4 dB,Y.Wei et al,2002 IEEE MTT-S symposium,患睡隆哦头莉她竹宰欠浦但只堡撂淋畅劳宗歪翌入悟砌辉碴愤弯蹲繁中泻40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technolo

19、gy,Continuing work,Higher-current DHBTs for increased mm-wave output power250 GHz fmax,Ic,max=240 mA,thermally stable at 200 mA bias at Vce=3.2 Volts suitable for W-band 150 mW power amplifiersW-band DHBT power amplifiersdesigns for 100 mW saturated output power now being testedResults to be reporte

20、d subsequently,UCSB,Yun Wei,LEC 2002,嘘腺莆夜氧挎至惊坍误哭燎锯角抡吐傲坐雏届遂战箕戊俯马网爷矫贵短匣40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,Conclusions,40 GHz MMIC power amplifier in InP DHBT technology 7 dB power gain and 14 dBm output power at 1 dB compression.17 dBm(

21、50 mW)saturated output power 12.5%peak power added efficiency Future work:higher power DHBT power amplifiers at W-band and abovelumped 4-finger topology,longer emitter fingers,power combiningG-band(140-220 GHz)DHBT power amplifiersAcknowledgementWork funded by ARO-MURI program under contract number PC249806.,UCSB,Yun Wei,LEC 2002,盯藤灸版喧坟汰茨找纺橱醛蔑慑退傻稗岛话吗蹭办突恋跪州喝犯累笛突傲40 GHz MMIC Power Amplifier in InP DHBT Technology40 GHz MMIC Power Amplifier in InP DHBT Technology,