Infineon产品介绍资料.ppt
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1、Infineon IGBT-Smart Choice in Home Appliance,Jimmy Wang(王 进)Infineon technologies ChinaSystem application engineerJimmy.W,New IGBT family optimized for home appliance,2023/2/13,Contents,Infineon new high speed3 IGBT,Aircon split system with Infineon high speed3&RC-drives IGBT,IGBT overview,2023/2/13
2、,Contents,Infineon new high speed3 IGBT,Aircon split system with Infineon high speed3&RC-drives IGBT,IGBT overview,2023/2/13,Discrete IGBTs ApplicationsWhite goods&consumer Drives 白家电,消费驱动类Washing machines洗衣机Vacuum cleaners吸尘器Air Conditioners空调Refrigerators电冰箱Dishwashers洗碟机Inductive cooking电磁炉Low po
3、wer industrial drives 低功率工业驱动Escalators,Elevators电梯Industrial robots工业机器手Air handling,Fans风扇Pumps泵Sewing machines缝纫机UPS systems and power supplies UPS 电源Solar inverters太阳能逆变WeldingAutomotive汽车,Discrete IGBTs-Applications,InverterDrivenApplications,2023/2/13,Application frequency is the main selectio
4、n criteria of IGBT,IGBT-Where to use.Difference between IGBT,MOSFET and Bipolar Transistor,Frequency,Application Requirements,Ultra high(150 kHz),low,high,low 12 kHz,medium 40 kHz,Bipolar Transistor,MOSFET,IGBT,high 150kHz,Difference IGBT vs.MOSFET:smaller chip size-lower price softer switching,lowe
5、r EMI temperature stable-no significant losses increase increasing Ta/Tj not suitable for ultra high frequencies,Diff.IGBT vs.Bipolar:higher ruggedness(short circuit,avalanche)easier design less passive devices needed in system-lower system cost at same low VCEsat,2023/2/13,IGBT comparing MOSFET,Add
6、itional P+layer,MOSFET,IGBT,2023/2/13,Contents,Infineon new high speed3 IGBT,Aircon split system with Infineon high speed3&RC-drives IGBT,IGBT overview,2023/2/13,The IGBT is basically the preferred device for higher currents at limited pulse frequencies.,VCE,Technological BackgroundDifference betwee
7、n IGBT and MOSFET,Conducting,Switching,2023/2/13,Technological background:TrenchStopTM,TrenchStopTM is the common technology base of new IGBT families from Infineon,2023/2/13,The key to IGBT performance is the carrier profile engineering,Technological background:Tuning IGBT performance,RuggednessEMI
8、,2023/2/13,Competitor landscape,Applikationsbewertung,2023/2/13,600V High speed 3 IGBT product family,20A,Single IGBT,30A,TO-247,TO-220,DuoPack,20A,30A,50A,IGP20N60H3,IGP30N60H3,IKW20N60H3,IKW30N60H3,IKW40N60H3,40A,IGW50N60H3,IGW40N60H3,40A,15A,15A,25A,Devices are fully released,25A,IGB20N60H3*,IGB3
9、0N60H3*,TO-263,IKB20N60H3*,IKB30N60H3*,IKP20N60H3*,IKP20N60H3*,IKW50N60H3*,50A,75A,IKW75N60H3*,*Engineering samples October 2010,2023/2/13,High speed 3 IGBT technologyswitching waveform,Elimination of tail current at high temperature,for MOSFET-like switchingbehavior,2023/2/13,Diode selection:exampl
10、e of Turn-on Waveforms showing benefit of SiC diode,Ic=20A,Vdc=400V,Rgon=10 Ohm,Tj=150C,SiC Diode provides 50%lower Eon losses of IGBT compared to Emcon3 diodeBased on requirements of target applications,the Emcon3 with the rated current of IGBT was selected for the final products,Si Diode,SiC Diode
11、,2023/2/13,PFC in-circuit test,Continuos Current Mode PFCVin=115 230VPout=0-900W 60kHzPout=0-600W 100kHzBoost inductor L=1mHClip mounting+Capton Foil for HeatSink insulationHeatsink Temp.Control=40C,2023/2/13,HighSpeed3 best result at light load,-0.15%at full load,+0.1%,-0.15%,Efficiency ComparisonF
12、s=60kHz,30A IGBTs in TO247,2023/2/13,HighSpeed3+1.1%at light load,-0.15%at full load,+1.1%!,-0.15%,30A IGBTs in TO247,Efficiency Comparison(cont)Fs=100kHz,2023/2/13,Turn-off Waveform comparison 115Vin,Pout=500W,60kHz,IKW30N60H3,IGBT Best competitor,Smooth switching waveforms Low dV/dt and dI/dt for
13、reduced EMI,Ic=5A,Vce=400V,Vge=+15/0V,2023/2/13,Case temperature comparison,Lower case temperature both at 60 and 100 kHz for improved realibility and less cooling requirementsTjmax=175C for Infineon IGBT,Dt=13C,2023/2/13,Rg reduction and EMI considerations,IFX devices show lower dV/dt during turn-o
14、n and turn-offRg can be reduced from 33 Ohm to 7 Ohm still maintaining same or lower dV/dt and hence good EMI behaviour,IGBT with FullPAK Base on High Speed3 Techology,The new 30A IGBT FullPAK will be release soon.Benefit of FullPakMany customers like this package because of the easier mounting proc
15、essThe mounting process does not need any insulating foil and bushing,thus providing cost saving and better reliability,2023/2/13,Launched H2.2010,2023/2/13,Summary,Infineon new High Speed3 IGBTs offer:Reduced switching losses without penalty of high conduction lossesTemperature stable behaviourSmoo
16、th switching waveforms allow to redeuce Rg and EMI.Easy paralleling(where required)Best-in-class devices for improved power densities in Solar,UPS,Welding,SMPS applications,2023/2/13,Contents,Infineon new high speed3 IGBT,Aircon split system with Infineon high speed3&RC-drives IGBT,IGBT overview,202
17、3/2/13,New Innovation Reverse Conducting Technology for Drives,RC-Drives:Infineon now offers the free wheeling diode monolithically integrated into the TRENCHSTOP IGBT-die for hard switching applicationsSame DC current rating of diode and IGBTThis leads to current classes 15A being available in new
18、package classes.,2023/2/13,How to improve the standard IGBT-technology?,Infineons TrenchStop-Technology meets today tomorrows requirements,Introduction of trench gate technology reduces VCE(sat)further Reduction of Conduction Losses for higher Efficiency,2023/2/13,Innovation Breakthrough-Monolithica
19、lly Integrated Diode,Key differentiators4A,6A,10A and 15A devices now available in IPAK or DPAKMajor price advantageSpace savingLowest Vce(sat)for low conduction losses Tj(max)=175C,DPAK,DPAK,Additional featuresWide range of turn-off/-on time controllability via gate resistorVery good EMI behaviour
20、thanks to smooth switching5 us Short Circuit capability,2023/2/13,600V Product Family TRENCHSTOP DuoPack&RC-Drives,6A,IGP06N60T,10A,IGP10N60T,15A,IGB15N60T,IGP15N60T,20A,Single IGBT,30A,IGB30N60T,IGP30N60T,IGW30N60T,TO-247,TO-263,TO-220,TO-220FULL-PAK,IKW20N60T,IKP04N60T,IKB06N60T,IKP06N60T,IKB10N60
21、T,IKP10N60T,IKB15N60T,IKP15N60T,DuoPack,IKW30N60T,IKA06N60T,30A,(D-PAK),IKA10N60T,IKB20N60T,IKP20N60T,IKA15N60T,IKW50N60T,IKW75N60T,50A,75A,IGW50N60T,IGW75N60T,50A,IGB50N60T,IGP50N60T,TO-251,(I-PAK),TO-252,(D-PAK),TO-262,IKI04N60T,IGB10N60T,Comprehensive portfolio for hard switching applications,4A,
22、6A,10A,15A,20A,75A,IKU04N60R,IKU06N60R,IKU10N60R,IKU15N60R,IKD04N60R,IKD06N60R,IKD10N60R,IKD15N60R,2023/2/13,Parameters of RC-Drives,Product Specifications,Power Density increase,2023/2/13,Example of Inverter Size OptimizationDPak vs D2PAK,DPAK needs 1/3 board size of D2PAK,2023/2/13,RC-DrivesMajor
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