Labreliability可靠性测试课件.ppt

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1、1,Reliability Test(可靠性測試),2,Kinds of Reliability Test(可靠性測試的種類),Precon Test(Preconditioning Test)预处理测试Reliability Test 可靠性测试T/C Test(Temperature Cycling Test)温度周期测试 T/S Test(Thermal Shock Test)热冲击测试(迅速冷热交替)HTST(High Temperature Storage Test)高温仓测试（可以置于空气或者氮气柜中）T&H Test(Temperature&Humidity Test)温度及湿度

2、测试（水环境,腐蚀，电解质置换Au.A.基板铜层可能short,pad Al腐蚀；b.第一bond点断开）PCT(Pressure Cooker Test)高压锅测试（饱和蒸汽，100%RH,主要用于QFP产品）HAST(Highly Accelerated Stress Test)高加速应力测试（不饱和蒸汽，80%RH,主要用于BGA产品）Psi 磅/平方英寸 英制压力1Psi=6.89x103pa1Pa=105bar=145x106psi,3,I.Preconditioning Test(預處理測試),To know the workability of Semiconductor dev

3、ices after soldering.知道焊接后半导体元件的可使用性It simulates delivery from assembly house to customers plant and soldering on PCB.模拟从封装厂到客户处的运输及在线路板上的焊接,Purpose of Precon Test(預處理測試的目的),4,Procedure of Precon Test 预处理的程序,5,Moisture Sensitivity Levels 水分灵敏度,J-STD-0207,MSL Level可以自己做，比如MSL level 3 pass,Level 2 fai

4、l,那么此产品就做MSL Level 3合适.,6,Defects after Precon Test 预处理后的故障,1.Package Crack 封装面的开裂2.Delamination 分层3.Electrical Open/Short 开路/短路,7,Defects after Precon Test预处理后的失效,8,II.Reliability Test 可靠性测试,To know the workability of Semiconductor devices after Board Mounting in Real Situations which can be induce

5、d by actual users知道在半导体元件固定到板后的可使用性及客户可能引起的真实情况,Purpose of Rel.Test 可靠性测试的目的,9,Procedure of Reliability Test 可靠性测试的程序,T&H45ea,HTS45ea,T/C45ea,T/S45ea(option),PCT45ea,PRECON TEST预处理测试,HAST45ea,10,Temperature Cycling test温度周期测试,Purpose of T/C温度周期变化测试的目的,To know the durability of Semiconductor package

6、resisting expansion and shrinkage by high and low temperature.知道半导体器件承受高/低温冲击下的膨胀和收缩能力,11,Temperature Cycle Test 温度周期测试,Test Conditions 测试条件Temp:+150/-65 deg.C 温度：+150/-65摄氏度2)Time:15 min/zone 时间:15分/区间3)Read-out Point:1000 cycle 读取点：1000次循环Measurement 测量Open/Short Test 开短路测试,12,Effects of T/C Test

7、影响温度周期的因素,Expansion,Shrinkage,13,Failures after T/C Test 温度周期测试后的失效,Open due to Bond Lift or Ball Neck Broken by the chip surface Delamination 芯片表面分层造成的结合翘起或瓶颈而导致的开路2)Short due to Cracked Die 芯片裂缝造成的短路,14,Open Failure after T/C Test 温度周期测试后的断路,Die Top Delamination&Ball Neck Broken芯片顶部的分层及 焊球瓶颈处破裂,15

8、,2.Thermal Shock Test热冲击测试,Test Conditions 测试条件Temp:+150/-65 deg.C 温度：+150/-65摄氏度2)Time:5 min/zone 时间:15分/区间?3)Read-out Point:1000 cycle 读取点：1000次循环Measurement 测量Open/Short Test 开短路测试,?,16,3.High Temp Storage Test高温仓测试,Purpose of HTST高温仓测试的目的,To know the durability of Semiconductor package when expo

9、sed under the high temperature for long time.知道半导体器件长期暴露在高温下的能力,17,High Temperature Storage Test高温仓测试,Test Conditions 测试条件Temp:150 deg.C 温度：150摄氏度2)Read-out Point:1000 HRS 读取点：1000小时Measurement 测量Open/Short Test 开短路测试,18,Effect of HTST影响高温仓测试的因素,1)This test accelerates a diffusion among Semiconducto

10、r materials by heat then makes Open failure.测试加速了半导体材料的温度导致的开路2)Crack can be occurred by heat.温度产生的裂缝,19,Open Failure after HTST高温仓测试后的开路,Kirkendallvoid,EMC,Si die,Au,Al,Al向Au扩散的速度比Au向Al扩散的速度开，形成EMC Void,20,4.Temperature&Humidity(T&H)Test温度及湿度测试,Purpose of T&H Test温度及湿度测试的目的,To know the durability o

11、f Semiconductor PKG under the high temp and humidity condition知道半导体器件高温高湿下的能力,21,Temperature&Humidity Test 温度及湿度测试,Test Conditions 测试条件Temp:85 deg.C 温度：85 摄氏度2)Humidity:85 RH%湿度：85 3)Read-out Point:1000 HRS 读取点：1000小时Measurement 测量Open/Short Test 开短路测试,22,Effect of T&H Test影响温度及湿度测试的因素,Al bonding pa

12、d corrosion can be occur by the moisture which was absorbed through EMC than makes Open failure 由通过EMC吸收的水汽造成AL结合片腐蚀比开路造成的来的多Short or Leakage can be occur by ion which moves through moisture inside package 水离子在器件内部造成短路或者渗漏,23,Failure after T&H Test温度及湿度测试后的失效,Leakage by the Dendrite结晶造成的渗漏,24,5.Pres

13、sure Cooker Test(PCT)高压锅测试,Purpose of PCT高压锅测试的目的,To know the existence of gap between EMC&L/F知道目前EMC和L/F之间的差别,25,Pressure Cooker Test高压锅测试,Test Conditions 测试条件Temp:121 deg.C 温度：121摄氏度2)Humidity:100 RH%湿度：100Pressure:2 ATM 压力：2ATM4)Read-out Point:168HRS 读取点：168小时Measurement 测量Open/Short Test 开短路测试,2

14、6,Aluminum bonding pad corrosion failure can be occur by the moisture which was penetrated through a gap between EMC and Lead Frame.穿过EMC和lead frame缝隙的水分可以造成铝的bonding pad腐蚀This corrosion can makes open failure.腐蚀可能引起开路,Effect of Pressure Cooker Test影响高压锅测试的因素,27,Pad Corrosion by PCT高压锅测试造成的Pad腐蚀,NO

15、CORROSION无腐蚀,CORROSION腐蚀,28,6.Highly Accelerated Stress Test(HAST)高压锅测试,Purpose of HAST高压锅测试的目的,To know the existence of gap between EMC&Substrate知道目前EMC和Substrate之间的差别,29,HAST高压锅测试,Test Conditions 测试条件Temp:130 deg.C 温度：130摄氏度2)Humidity:100 RH%湿度：100Pressure:33.3Psi 压力：33.3Psi4)Read-out Point:96HRS 读取点：96小时Measurement 测量Open/Short Test 开短路测试,