硅负极材料的相关应用介绍ppt课件.pptx
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1、寿命寿命硅负采材料Silicon anode with life cycle life,Prof.Xinping QiuDepartment of Chemistry,Tsinghua UniversityBeijing,100084,China,1/10/2023,Si:4200 m Ah/g,1,Multi electron reaction materials,1/10/2023,J.R.Dahn,Electrochem.Solid-State Lett.,2001,4,A137.J.R.Dahn,J.Electrochem.Soc.2003,150,A1457.,2,Colossal
2、volume change,Change in(a)length+and width x,(b)height,and(c)volume of the a-Si tower compared to(d)voltage vs.AFM scan number.,Schematic diagram of the in situ AFM apparatus.,Optical micrograph of a Li-alloy film after expansion,1/10/2023,Y.Cui,Nat.Nanotechnol.,2008,3,31.|Y.Cui,Nano Lett.2011,11,29
3、49.|G.Yushin,Nat.Mater.,2010,9,353.|G.A.Ozin,Adv.Funct.Mater.2009,19,1999.|X.J.Huang,Adv.Mater.2011,23,4938.|X.P.Qiu,Electrochem.Commun.,2007,5,930.|S.M.Lee,Electrochim.Acta,2008,53,4500.|J.G.Zhang,J.Electrochem.Soc.,2010,7,A765.|J.R.Dahn,Electrochem.Solid-State Lett.,2007,10,A17.|G.Yushin,ACS Appl.
4、Mater.Inter.,2010,11,3004.|G.Yushin,Science,2011,334,75.,3,Strategies for silicon anodes,Particle pulverization,“A strong size dependence of fracture in silicon material was discovered that there exists a critical particle size of 150 nm below which cracking did not occur.”2,Size effect,1 H Zhang,Na
5、no Letters 2012,12,2778.;2 XH Liu,ACS Nano.2012,2,15221531,1/10/2023,4,Current collector;Binder;Array,Stability in Si-based material,?,1,1/10/2023,5,The exposed active surface due to the volume change cause continual formation of SEI films and low coulombic efficiency(CE).,Research routes,Reduce the
6、 particle size to accommodate SEI filmDesign porous or hollow structure to buffer the volume expansion Composite with C or Metal(Cu)to increase electronic conductivity and modify the interface between Si and electrolyte.Investigate new binder and electrolyte additives system for Si-based anode mater
7、ials,Stability of SEI film,6,1/10/2023,Porous Si/C composite,Synthesis Process,1/10/2023,Morphology,7,in 1 bold,1 ePorous structure of carbon substrate can be observed from TEM imagesAfter CVD,silicon particles adhere to the framework and porous structure was maintained.Particle size of silicon is 1
8、0 nm and homogeneously dispersed.The deposited silicon in Porous Si-C is amorphous,as indicated by the absence of crystallites and broad diffuse rings in the SAED patterns.In contrast,when composite is heated to 700 C for 0.5 h,a lattice fringe corresponding to d111=0.31 nm for silicon is seen in Po
9、rous Si-C-700.,Results and analysis,SEM and TEM images,1/10/2023,8,in 1 bold,1 eObvious characteristic peak of crystal silicon after heat treatment at 700 C for 0.5 hThree obvious diffraction peaks around 28,47 and 56 are found after heat treatment,which correspond very well to the(111),(220)and(311
10、)peaks of silicon without any impurity peaks.The peak at 520 cm-1(indicative of crystalline silicon)is not detected after silicon CVD.The bands centered around 155,474 cm-1 and the weak shoulder at 400 cm-1 are typical features of amorphous silicon vibration modes 1.,Results and analysis,Structural
11、characterization,1 D.Aurbach,J.Phys.Chem.C,2007,111,11437.,XRD patterns and Raman spectra,N2 sorption isotherms,Pore size distribution,Both porous carbon and porous Si-C show type IV isotherm,which is typical characteristic of mesoporous structureObvious decrease of specific surface area(SSA)and por
12、e volume after Si CVD,Porous carbon:650 m2/g,1.32 cc/g,Porous Si-C:150 m2/g,0.39 cc/g,Pores with diameter of 3 nm generated by decomposition of sucrosePores with diameter of 1040 nm due to the removal of CaCO3 template,which were reduced after Si CVD,Porous Structure,1/10/2023,9,Charge-Discharge cur
13、ves,Cycling performance,1)2nd charge capacity;2)VC:vinylene carbonate,1/10/2023,10,Electrochemical performance,1st dch capacity:2404 mAh/g1st ch capacity:1541 mAh/g1st coulombic efficiency:64.1%Reversible capacity1:1504 mAh/gCapacity retention:67%after 200 cycles,Recipe:Porous Si-C:CB:binder(PAA)=6:
14、2:2;Electrolyte:1 M LiPF6 in EC-DMC-EMC(1:1:1 vol%)with 2wt%VC2;loading:0.61 mg/cm2.Capacity is only based on active material.Current density:0.1 A/g for 1-2 cycle,then 0.5 A/g;Voltage:0.05 2.0 V vs.Li,Rate capability,Increase current density from 0.1 to 2 A g-1,the specific capacity of Si/C composi
15、te is still above 500 m Ah g-1,when the current density changes back to 0.1 A g-1,more than 92%of the capacity at the first ten cycles is recoverable.,1/10/2023,11,Results and analysis,Nyquist plot of Si-C composite at the end of discharge after different cycles,in 1 bold,1 eElectrochemical impedanc
16、e spectra(EIS)measurement in a 5.0 mV AC voltage signal in the 105-0.02 Hz frequency range.Before each EIS test,the electrodes were discharged to 0.01 V galvanostatically and then remained at open-circuit for at least 2 h to stabilize their potential.The constancy of the characteristic frequency(20H
17、z,from 30-60 cycles)suggests that the kinetics of the charge transfer reaction does not vary upon cycling.Evolution of the resistance in mid-frequency region(inset)shows an increase in first 5 cycles then reduce and maintain around 40 Ohm in later cycles.,Results and analysis,1/10/2023,12,EIS test,1
18、 D.Guyomard,J.Mater.Chem.,2011,21,6201.,SEI film with cycling,Superficial and cross-sectional SEM images of our composite after a),b)10 cycles;c),d)20 cycles;e),f)50 cycles and g),h)commercial Si material after 50 cycles.,Porous structure of our synthesized composite still maintains after cycling an
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