光刻机结构及工作原理ppt课件.ppt

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1、电子工业专用设备,主讲教师：刘世元教授吴懿平教授办公电话：87548116移动电话：13986163191电子邮件：,机械学院先进制造大楼B310武汉光电国家实验室B102,讲授内容,第一讲：微电子制造工艺流程（回顾）第二讲：微电子制造装备概述光刻工艺及基本原理第三讲：光刻机结构及工作原理(1)第四讲：光刻机结构及工作原理(2),上讲内容：完整的IC制造工艺流程,上讲内容：微电子制造装备概述,加法工艺,减法工艺,图形转移工艺,辅助工艺,掺杂扩散离子注入薄膜氧化化学气相淀积溅射外延刻蚀湿法刻蚀干法刻蚀抛光及清洗化学机械平坦化清洗图形转移光刻测试及封装测试封装,后道工艺,扩散炉离子注入机退火炉,氧

2、化炉CVD反应炉溅射镀膜机外延设备,湿法刻蚀机反应离子刻蚀机,光刻机涂胶显影设备,CMP抛光机硅片清洗机,测试设备划片机键合机,上讲内容：光刻工艺流程,光刻工艺的8个基本步骤,气相成底膜,旋转涂胶,软烘,对准和曝光,曝光后烘焙,显影,坚膜烘焙,显影检查,上讲内容：光刻与光刻机,对准和曝光在光刻机(Lithography Tool)内进行。其它工艺在涂胶显影机(Track)上进行。,本讲内容：光刻机结构及工作原理,光刻机简介光刻机结构及工作原理,光刻机简介,* 微电子装备 芯片设计能力 芯片制造与制造设备 芯片测试与测试设备 设备是信息产业的源头： 我们开发设备、设备制造芯片、芯片构成器件、器件

3、改变世界！,光刻机简介,* 摩尔定律Intel 创始人之一摩尔1964年提出，大约每隔12个月：1). 芯片能力增加一倍、芯片价格降低一倍；2). 广大用户的福音、行业人员的噩梦。芯片集成密度不断提升、光刻分辨率的不断提升！,* 2006国际半导体技术路线图(ITRS)原理研究样机研发产品量产持续改进,光刻机简介,* 光刻机的作用光刻机是微电子装备的龙头技术难度最高单台成本最大决定集成密度光刻机是源头中的龙头！,光刻机简介,光刻工艺流程,光刻机简介,Lithography = Transfer the pattern of circuitry from a mask onto a wafer.

4、,* 对准曝光工作流程,光刻机简介,光刻机简介,光刻机简介,Development of lithography system,* 光刻机发展路线图1,光刻机简介,* 光刻机发展路线图2,光刻机简介,光刻机三巨头,光刻机简介,光刻机原理,Reticle (Mask)WaferLightLensPhotoresist,wafer,die,Image (on reticle),Image (on wafer),光刻机原理,硅片(wafer),单晶硅芯棒直径可达300mm,长度可达30feet (9m)，重量可达400kg。用金刚石锯，将芯棒切成薄圆片，即晶片(wafer)。,标准晶片尺寸和厚度为：

5、100mm (4”) x 500m150mm (6”) x 750 m200mm (8”) x 1mm300mm (12”) x 750m,硅片,Wafer type: SEMIJEIDADiameter： 8 inch - 200mm12 inch 300mmNotch：Y/NFlat edge lengthClearance RoundFlat,SEMI = Semiconductor Equipment and Materials International JEIDA = Japan Electronic Industries Development Association,光刻机重要

6、评价指标,CD Line width（线宽）Overlay（套刻精度）Field size（场尺寸）Throughput（生产率）,Y,Wph,CD = Critical Dimension,光刻机重要设计指标,* 光刻机 (汞灯),光刻机总体结构,* 光刻机 (激光器),光刻机总体结构,Step and Scan System,193 nm Excimer Laser Source,Computer Console,Exposure Column(Lens),Wafer,Reticle (Mask),光刻机总体结构,自动对准系统,投影物镜系统,框架减振系统,掩模传输系统,调平调焦测量系统,照

7、明系统,工件台系统,掩模台系统,硅片传输系统,环境控制系统,整机控制系统,整机软件系统,光刻机结构及工作原理,曝光系统 (照明系统和投影物镜)工件台掩模台系统自动对准系统调焦调平测量系统掩模传输系统硅片传输系统环境控制系统整机框架及减振系统整机控制系统整机软件系统,光刻机结构：曝光系统,* 曝光系统激光器/汞灯提供光源照明系统 均匀照明掩模投影物镜 高分辨率成像,光刻机结构：曝光系统,* 曝光系统总体结构,光刻机结构：曝光系统,* 曝光系统工作原理,光刻机结构：曝光系统,* 曝光系统结构1,光刻机结构：曝光系统,* 曝光系统结构2,光刻机结构：曝光系统,* 曝光波长汞灯：g-Line (453

8、 nm)、h-Line (405 nm)、i-Line (365 nm)准分子激光器：KrF (248 nm)、ArF (193 nm)、F2 (157 nm)极紫外光源：EUV (13 nm)曝光波长影响光源技术：中心波长、光谱带宽、输出功率光学系统：光学设计、光学材料、光学镀膜光刻工艺：光刻胶、工艺参数,光刻机结构原理：曝光系统,* 汞灯光源,光刻机结构：曝光系统,* 激光器中心波长193.365 nm波长带宽0.3 pm脉冲频率4000 Hz脉冲能量5 mJ输出功率20 W,光刻机结构：曝光系统,* 离轴照明,光刻机结构：曝光系统,顶部模块 (Top Modular),光刻机结构：曝光系

9、统,* 刀口狭缝Slit,光刻机结构：曝光系统,* 投影物镜,典型的投影物镜： - 30 块镜片 - 60 个光学表面 - 0.8m 最大直径 - 500kg 重量,wafer,v,v,v,v,v,v,v,Objective lens,reticle,Condenserlens,Light source,Aperturestop,光刻机工作原理：成像原理Imaging Principle: Optical Projection,Imaging Principle: Fourier Optics,object,Projection LensEntrance Pupil,NA = Numerica

10、l Aperture = Angular Measure of Lens Size,(wafer),(reticle),Image,Definition of Numerical Aperture (NA),Diffraction,Illumination of a Periodic Grating,n = order #,n = 0,n = -/+1,n = -/+3,Diffraction Orders,n = 0,n = 1,n = 3,Reticle level,Wafer level,DC bias,Resist,Zero and +1st order waveform,Zero a

11、nd 3rd order waveform,Diffraction Orders,Zero order waveform,Recombination of Orders,A grating diffracts the light in orders.The orders contain information about the pattern on the grating.A lens can recombine the orders to form an image of the wafer.,-5,-7,+7,+5,sum,+,First order,Third order,Recomb

12、ination of Orders,Zero order,Recombination of Orders,Image,Fourier Coefficients,-3 -1 0 +1 +3,Zero order,Criterion to Form an Image,Only the zero order is not enough to form an image. (there is only a “DC level”)There must be at least two orders captured by the lens.This is also known as Abbe theore

13、m.,Diffraction in & Recombination of Orders,The grating (mask) transverse the light into orders.The lens captures these orders to form an image.,-1,+1,0,-3,+3,Depth of Focus (1),Image in focus.Depth of Focus (DOF): the area near the focus plane where the orders are near enough to give constructive i

14、nterference.,Depth of Focus (2),0th Order,Long wavelength,Short wavelength,Resolution: The smallest printable lines,NA,0,Resolution: Coherent Illumination,R,No imaging!,+1 0-1,+1 0 -1,Lithography resolution & depth of focus,光刻机原理：分辨率,光刻分辨率影响因素,曝光波长 l数值孔径 NA工艺系数 k1,照明光源（减小波长l),i-line,h-line,g-line,e-

15、line,浸液式光刻（提高NA),数值孔径浸液技术,分辨率增强技术,RET = Resolution Enhancement Technique = 分辨率增强技术 离轴照明 (方向）相移掩模 (相位)光学校正 (强度),照明与掩模,传统照明环形照明二极照明四极照明二元掩模移相掩模光学校正,Partial Coherent Illumination,Optical projection in Lithography,s = partial coherence factor = effective source filling factor in the projection optics pu

16、pil,Beyond the Resolution Limit,No imaging,Imaging!,s,s = fraction of pupil that is filled with zeroth order,NA,Coherent,Partial Coherence,+1 0-1,+1 0 -1,+1 0 -1,+1 0 -1,NA = 0.70, s = 0.85/0.55,120nm,Best Focus,110nm,120nm and 110nm Dense Lines using Binary Mask,wafer,-2 order,-1 order,+2 order,+1

17、order,0 order,reticle,lens,Conventional Illuminationresolution limits,Linewidth = 90nm Linewidth = 65nm Linewidth = 45nm,Illuminator,同轴照明,离轴照明,Introduction to Mask,Mask components,普通铬掩模,移相掩模,移相掩模 (PSM, Phase Shifting Mask),光学临近效应校正OPC,OPC种类,Mask版图设计,设计目标版图,OPC后版图,实际掩模,曝光图形,步进光刻机原理,Stepper,步进光刻机原理,扫描

18、光刻机原理,Scanner,扫描光刻机原理,Stepper,Scanner,曝光视场与投影镜头视场,曝光剂量控制,投影物镜波像差,波像差(Wavefront Aberration)是指经过投影物镜后的实际波面与理想波面之间的光程差,典型的投影物镜： - 30 块镜片 - 60 个光学表面 - 0.8m 最大直径 - 500kg 重量,波像差是衡量投影物镜性能的重要指标！,波像差的Zernike多项式表示,As polynomial expansion: Zernike polynomials: fn(, )Zernike coefficients: Zn,Intention of Wavefr

19、ont Metrology (1) On-line measurement (2) Measure Zernike coefficients up to Z37 (3) Suitable to partial coherent illumination,Effect of aberrationsAll aberrations: Reduction of contrastEven aberrations:Axial image shiftAxial asymmetriesOdd aberrations:Lateral image shiftLateral asymmetries,Odd aberration,Even aberration,Measurement process of the novel technique,Agreement between input and measured wavefronts,