拓扑绝缘体与拓扑半金属ppt课件.ppt

《拓扑绝缘体与拓扑半金属ppt课件.ppt》由会员分享，可在线阅读，更多相关《拓扑绝缘体与拓扑半金属ppt课件.ppt（46页珍藏版）》请在三一办公上搜索。

1、1,拓扑绝缘体与拓扑半金属,方忠中科院物理研究所,中国工程物理研究院材料科学技术发展会议,2,目 录,一、简介二、拓扑绝缘体材料：Bi2Se3，Bi2Te3三、拓扑半金属：HgCr2Se4,1. 简介：拓扑有序态,有序态是凝聚态物理研究的基本内涵之一 例如：磁有序态、电荷有序态、超导态等,局域有序态： 对称性破缺导致有序态 （朗道对称性破缺理论）1.物态可以用局域序参量描写 如：铁磁态的磁化强度 M(r)2.相变伴随着对称性破缺 如：M(r)的出现破坏了 旋转对称性,宏观有序态： 拓扑有序态 （量子物理与几何的完美结合）1. 具有拓扑性质的“量子态”2. 不能用局域序参量描写，而要用 全局拓扑

2、不变量描写3. 相变过程并不伴随对称性破缺,拓扑“0” 拓扑“1”,反铁磁,铁磁,自旋波,1. 简介：拓扑绝缘体简介,拓扑绝缘体：一种全新的拓扑有序态：受时间反演性保护 要考虑 相对论+量子力学,一般绝缘体,拓扑绝缘体,金属,费米能级,能带结构,表面态,体态,体态,体态,理论模型： 1. C. L. Kane，PRL (2005) 2. S. C. Zhang，PRL (2006),材料实现： 1. 二维材料： L. Molenkamp, Science (2007) 2. 三维材料： 方忠 等，Nature Phys. (2009) (Bi2Te3, Bi2Se3, Sb2Te3),与一般表

3、面态区别： 无论如何切样品，表面态总是存在,1. 简介: Why edge states？,“Band twist”,TI,VaccumNormalinsulator,Boundary,Cutting Band Ring,Defined by the Z2 number(or parity for inversion system)Ref: 1 Kane & Mele, PRL (2005). 2 Fu, Kane, Mele, PRL (2007) 3 Fu, Kane, PRB (2007).,Topological Insulators: 1. Insulating bulk 2. Co

4、nducting surface 3. Defined by the Z2 quantum number 4. Surface state is protected by T reversal symmetry 5. Robust against none-M disorders,Surface Stateordinary Insulator,Surface StateTopological Insulator,+,+,+,+,-,-,-,-,“能带 twist”,1. 简介: Different Surface states,1. 简介：Surface state vs Graphene,G

5、raphene,Surface state of TI,K,K,（1） 1/4 of Graphene， spin splitting， T-invariant（2） 2DEG without mass（3） Klien Paradox（4） linear nE， linear E， linear mE （5） QHE？ Localization？（6） Multi-ferroic？,（1） psudo-spin（2） Klien Paradox（3） linear nE， linear E， linear mE （4） Localization？ （5） Universal ？（6）.,1.

6、 简介：拓扑有序态 新奇量子现象,除非破坏性剪断,拓扑有序量子态的优点： 1. “0”与“1”严格区分， 无微扰过程，不怕干扰、噪声 2. 与“奇点”密切相关， 在边界上会有特殊量子态,信息高速公路：极低电阻、极低能耗,各行其道，永不混杂,遇到杂质，自动绕行,鱼目混杂，杂乱无章,遇到杂质，会被散射,普通态,拓扑有序态,奇点,面包圈,球,过渡,1.简介：量子霍尔效应（IQHE）,最早认识的拓扑有序态是-量子霍尔效应,量子Hall效应,中间绝缘边界导电,朗道能级,体态,边缘态,边缘态,1. Very Stable2. No backscattering (Edge state can not lo

7、calize)问题：1. 需要强磁场、极低温2. 破坏了时间反演对称性3. 只存在于二维系统4. 不是拓扑绝缘体 （需要借助于外磁场）,1. 简介：拓扑绝缘体简介,（1）基础科学发展：全新的物理概念、现象、效应 1. 新奇量子效应 2. 基本物理常数的确定,（2）下一代电子技术：革新性的进步 1. 准零能耗电子器件：无电阻的“理想导线” 2. “电”与“磁”交叉调控，巨大响应 3. 能源器件：热电效应、 非线性光学 4. 拓扑催化 5. 核燃料问题：高熔点、高热导,（3）国际发展的趋势：是当前国际发展的前沿 1. 欧美已投入巨资 2. 日本正在启动,重要性：,1. 简介: Family of

8、TIs?,2D 3DT-broken T-invariant T-invariant T-Broken Kondo QHE QSHE Topological Band Insulator QAHE Anderson Mott .,Edge StatesTKNN Z2Chern number,Surface States,Semi-metal,Femi points (in bulk),2. 拓扑绝缘体：T-broken vs T-Invariant,QSHE in HgTe/CdTe(S. C. Zhang, SCIENCE 2006),QHE,2. 拓扑绝缘体：Materials.,Guid

9、elines: 1. Semiconductor with inverted band structure 2. Strong SOC,+,-,+,+,-,-,Gap openingdue to SOC,“twisted band”,困难：Real materials for 3D TI?,+,+,+,-,-,-,Predictions for Bi2Te3 family: Basic Properties,1. Found 70 years ago. Naturwissenschaften, 27, 133 (1939),2. Semi-conductor. Optical Gap 0.2

10、eV J. Phys. Chem. Solids, 2, 240 (1957),3. One of the best thermoelectic materials. ZT 1 at room T,4. Easy to be synthesized,5. Whole Family: Bi2Te3, Sb2Te3 Bi2Se3, Sb2Se3,2. 拓扑绝缘体：Bi2Te3, Bi2Se3, Sb2Te3,Crystal Structure,I Center,2. 拓扑绝缘体：Bi2Te3, Bi2Se3, Sb2Te3,Band Structure Bi2Se3,1. Only Gamma P

11、oint is relavant.2. SOC will invert the bands at Gamma.3. Gap is around 0.3 eV.,Without SOC,With SOC,+,-,+,+,-,-,ab-initio Surface States:Bi2Se3 has the biggest Gap around 0.3eV,H. J. Zhang, et.al., Nature Phys. (2009),Penetration Depth of Surface state, 2nm,2. Materials：Bi2Te3, Bi2Se3, Sb2Te3,W. Zh

12、ang, et.al., New J. Phys, 12, 065013 (2010),Chiral Spin texture,Y. L. Chen,et.al. SCIENCE (2009)Bi2Te3,Y. Xia,et.al. Nature Physics (2009)Bi2Se3,2. TI Materials： Exp. evidence,ARPES,T. Zhang, et.al., PRL (2009).,2. TI Materials： Exp. evidence,Absence of back-scattering,2. TI materials：,拓扑绝缘体在压力下的超导态

13、：,靳常青，PNAS（2011）,孙立玲，等，PRB(2011).Editors Suggestion,拓扑超导态？,2. 拓扑绝缘体：最新进展,磁性拓扑绝缘体-量子化反常Hall效应,量子Hall效应,Bi2Se3 film doped with Cr or Fe,量子反常Hall效应方忠、戴希等，SCIENCE(2010)无需外加磁场实现量子Hall效应！,已获得初步实验证实：何柯，马旭村,薛其坤等，Cr-Bi2Te3-Sb2Te3 film，arxiv：1108.4754(2011).,Crystal Structure: T 417 K, -Ag2Te, anti-fluorite (

14、Fm3m) T 417 K, -Ag2Te, distorted (P21/c),2. TI Materials：Ag2Te,Cubic: a,b,c,GaAs,2. TI Materials：Ag2Te,Inverted Band Structure of -Ag2Te Similar to HgTe,6,7,8,S-band,P-bands,GaAS,6,7,8,HgTe,2. TI Materials：Ag2Te,-Ag2Te, gap=80meV,W. Zhang, et.al., PRL 106, 156808 (2011).,Quantum Magneto-resistance i

15、n Ag2+Te?,Super-linear MRR. Xu, et.al., Nature (1997).,Conventional MR:,Abrikosovs Quantum MR:,Linear Dispersion is Important!Landau Level Spacing.,3. 拓扑半金属：Momentum Space Topology,Three distinct stable classes in 3D:,Insulators,Semi-metal,Fermi surface,Ef,Metals,No fermi surface,Femi points (in bul

16、k)Fermi arcs (on surface),Normal Insulators+Topological Insulators(Weyl points at Boundary),Our Subjects,3. 拓扑半金属: Family of TIs?,2D 3DT-broken T-invariant T-invariant T-Broken Kondo QHE QSHE Topological Band Insulator QAHE Anderson Mott .,Edge StatesTKNN Z2Chern number,Surface States,Semi-metal,Fem

17、i points (in bulk),3. Semi metals: From 2D to 3D without TRS？,2D Chern Insulators:,+,-,+,+,-,-,Gap openingdue to SOC,+,+,+,-,-,-,3D: (1) Weak 3D Chern Insulators: (2) Strong 3D-Any analogy? Chern semi-metal: Time Reversal Polarization in momentum space!,3. Semimetals: Chern Insulators and semi-metal

18、？,Weak Chern Insulators:,Kz=0,Kz= ,Kz=0,Kz= ,Kz,Topological Phase Transition,3. Semimetal: Chern semi-metal？,Chern Insulator,Normal Insulator,Normal Insulator,Kz,xy= C e2/h,2x2 Hamiltonian in Bulk (not 4x4):,Weyl nodes at:,Berrys connection:,Berrys curvature:,Kz,Kx,Ky,3. Semimetal: Chern semi-metal？

19、,(2) Time-reversal polarization & Magnetic Monopoles in the K-space.,around,(See, Z. Fang, Science (2003),(3) Fermi arcs on the side surface.,(See, X. G. Wan & Savaraso, PRB (2011), on AF Pyrochlore iridates),(4) QAHE in quantum well structure.,(1) It is topologically unavoidable. (not accidental),3

20、2,HgX sublattice is zinc-blendeTwo HgX sublattice are connected by Inversion, like Diamond.Space group Fd-3m (point group Oh). Each Cr atom is octahedrally coordinated by 6 nearest Se atoms.,Crystal structure of HgCr2Se4,Crystal structure,BZ,HgCr2Se4,P. K. Baltzer, et.al, PRB (1966),HgCr2Se4,Metalli

21、cN. I . Solin, et.al, PRB (2008),AHEN. I . Solin, et.al, Phys. Solid State (1996),35,Electronic structure without SOC,DOS,36,Electronic structure without SOC,Band,37,Schematic diagram for the band-inversion,38,Electronic structure with SOC,low energy band with SOC,39,Weyl fermions and magnetic monop

22、oles,linear, with a phase of 4 for the chiral spin texture. The two Weyl nodes form a single pair of magnetic monopoles carrying gauge flux in k-space.,40,8-band model for HgCr2Se4,Two basis: |3/2, 3/2 , |S, -1/2 with band-inversion,two gapless solutions:,2-band effective model,Edge state in kz=0.06

23、 plane,Band of bulk,Edge state,Distribution along x,A,D,C,B,Edge states and fermi arcs on surface,42,Edge states and fermi arcs on surface,Fermi arcs for the (ky, kz) side surface,Fang & Dai, et.al, PRL (2011),43,QAHE in the quantum well structure,Energy gap at vs. d,Hall conductance vs. d,Our Early

24、 Proposal: Bi2Se3-doped by Cr, Fe. Science (2010),4. Topological Dirac Semimetal:,Weyl Semi-metal,Separated in K2x2 HamiltonianNo T or I symm,Dirac Semi-metal,+,Overlapped in K4x4 HamiltonianProtected by crystal Symm,Na3Bi,K3Bi,Rb3Bi,4. Topological Dirac Semimetal:,Marginal Fermi points in Na3Bi,K3Bi,Rb3BiArxiv.org: 1202.5636 (2012),谢 谢 ！,