导出页面自 CPVC13官光伏论文集（上册）.docx

IBC1017A1203-SiNx22323539/434750596568727783/899397Al-Si102107GaIll115123133PL-EL139PERL143148EL153162167IBC184(HJ-BC)188p-n193A1203196200205N20920%P213218nCCXXVI1&3%23719.8%EfficientMetalWrapThroughSolarCells238AZO239HighefficientlocalAlBSFsolarcellsWithchemicalandIaserablation240IBC241N2242N243N244n245PECVD246Over19%CEc-Sicellsenabledbyionimplantation247p248249p250n251252253254p255PERC256257258259260261262IBC263264265266267268a-Si:H/bSiA1203269270271272ArZnOiB-TCO.274ITO,.278,285NP/，291TMO.2Ag/ZnO,306312318325333338MOCVDZnOZnO344nSiOx/348BZO/354362.369NIP374n-i-p.380ZnO:H.388.394398/.403/.409414.417ZnO-TCO421427433P.437HWCVD440N445AZO.446ZnO-TCO447ITO448449450451452453MOCVDZnOZnO.454455456MgGaZnO-TCO457458459460ITO46113%a-Sia-SiGc-Si462463ZnO:H464IBC510006IBCIBC(Cabanas-Ho ImenPn1PClD PC2D IBCPClD网 Peng ChenIBC+nKirstenBasorePC2DPClDHanwhaSolarPaulBasorePC2DIBCKirstenCabanas-Holmen2011PC2Dc3k41IBC2M.CascantPClDIBC(5D.S.KimDessisIBCPC2DJ.RenshawA.RohatgiSentaurusIBC21PClD:1.0X10,ncmj5QX1U”CmT1.lOJPClDle6s1.oXi(PCm/s500mV1.OXlO7nsljIBC1.12JP-nnMm2.2PC2DIBC镜像单元SiNX减反膜n型前表面场n型背面场隔离区K-电极接触区n型基底P型发射极SQ2钝化膜IBCpnIBC10%-80%,10%-50%10%-80%Qcmn1000m100<m!2.3PC2DnIBCmsr-40-160.口PCH-*67788990。Joe.passivated(A/cm)广NbbXXS8000120140shere三.stanceRsq(Rq)2.5X1。-2m1)c2.0X10-2(A1.5X1。-2IoX0-25.0x10-30.0-60Joe.metalcontacted08022080600809901370817508214082520829108329p-np-nJscn6xlOhemT614PJscJscFF5JscFFEffEffEffVocJscFFJscVocFFJscEffEff20.80%Jk11.20%118Eff20.80%1:1:182:0:18Eff21.232%21.229%3.388hhRsq=60/1Voch7VocD2 C P(0V)-eooh Jon.totalo Jop.total? ?：406080100 120140160Rsq( )VocVocRsq=60/604020008060404(bsEUO)dCSHRsq,n(ohmsq)Jsc9Jsc160Jsc(mAcm2)S爻U380(bsUIMO)d.bsH120137.837 637.4l三三37.280100120140160Rsq.n(ohmsq)JscJscJscJsc196FF10FF120(bsEuo)dbsHRsq,n(ohmsq)RsqnohmZsq)0.8120810F0.808(bMEMO)dbs40-60/20.57%11:1840/40/2L63%4iiAtf1 FilipGranekHigh-efficiencybackcontactback-junctionsiliconsolarcellsDissertation,FraunhoferISE,20092 D.A.ClugstonandP.A.BasorePClDversion5:32-bitsolarcellmodelingonpersonalcomputersinProceed-ingsofthe26thIEEEPhotovoltaicSpecialistsConferenceAnaheim,California,USA,207-1019973 http:WWw.pc2dinfb/home4 RA.Basore,K.Cabanas-Holmen.PC2D:ArcuIarreferencespreadsheetsolarcelldevicesimulatorPhotoVoltaiCSIEEEJournalo£VoL1,No.l,pp72-77,20115 MCascant,D.MorecrofK.BoulifetalFrontsurfaceeldformationanddiffusionprfesforindustrialinterdigitatedbackcontactsolarcells27thEuropeanphotovoltaicsolarcellconferenceandexhibition,20126D.SKim,V.Meemongkolkiat,A.Ebong,etaL2Dmodelinganddevelopmentofinterdigitatedbackcontactsolarcellsonlow-costsubstratesIEEE(2006)7 JRenshaw,A.RohatgiDeviceoptimizationforscreenprintedinterdigitatedbackcontactsolarcellsIEEE(2011)8 K.Cabanas-Holmen,P.A.BasoreCom-parisonofIDand2Dmodelresultsforselectiveemitterandinter-digitatedbackcontactcells27thEuropeanphotovoltaicsolarcellconferenceandexhibition,20129 PengChen,ShuoWeiLiangJanGeeLee.Modelingandanalysisofgeometrydesignofrrtypeinterdigitatedback-contactsiliconsolarcell27thEuropeanphotovoltaicsolarcellconferenceandexhibition,201210.201211KirstenCabanas-HolmenandPaulA.BasoreComparisonof1Dand2Dmodelresultsforselectiveemitterandinterdigitatedbackcontactcells27thEuropeanphotovoltaicsolarcellconferenceandexhibition,201212 PietroRAltermatt,JurgenCSchumacher,AndrSCuevas,etaLNumericalmodelingofhighlydopedSi:PemittersbasedonFermi-Diracstatisticsandself-consistentmaterialparametersJAppLPhySVol92,Na2002McGrawHilL200513 Andr6sCuevas,PaulABaSoreG aelle Giroult Matlako w ski, Christiane Dubois Surfacejcmbaoqq. comshenhuil 956 163. comRecombinationvelocityofhighlydopedn-typesilicoaJAppLPhys80,3370,199614 RLAnderson,RLAnderson,Fundementalsofsemiconductordevice,1,21131NakayamaKazutaka3SendaShinji31.0725502.3000723.2300HigashiyamaMiyoshi-choMiyoshiJAPANAichi470-0293617.5%1PECVDPNU100%50m“processI0.0020.2-Q跳13F网版推利刀印刷同静电1片162.1566,max-CuJ*mpmpJmpVmPRf=-B2PsnfP=Ia2Bprbsmb2.2PSnfPsmbPSnfPsnlbPSbW呼nipV-'mpWf-S-WB-s1.2WbWb(4)(D231.dPCfj1.mpcv-mpPCPCdV石2.42.5cm2p_AJmPS2tl1mp(6)2.6processB646Mm80JRJsc36mR90d3.2mmd<12KT(qJscRw)3p180Nm0.53cm156mm×156mmPOCl39On+p/nHFRoth&RauPECVD8015m18Nm50NmPV17a44.13D7846Nm40028m4564400300002000068663423130025020015010.0002815500100000150000200(X)O25000028337150m3D978936Nm42(6)1O.002m0.2JBP/1()7A/mmZa513.550.3%PsmfPSInb/10IC6.154.717.5%plfo7w4.122991p1o7w2061.5722Psf10W4.894.89P/W0.770.77pjo7w1.311.32pto2w1.791.82P/W0.8620.85612%0.12%21,.y22010,1012P101-103.Uoc/V0.6242XudongChen,KennethChurch,HaixinQbZZYangetaHighAspectRatioFineGridLineIsc/Aa542a630forFrontSideMetalizingofIndustialRs/0.00250.0022SiliconSolarCellbyDirectPrint!ngAlRShZFF%79&40263&58326thEuropeanPhotovoltaicSolarEnergyConferenceandExhibitionC,Hamburg7&1497&129Germany,201LNCell/%17.1317.253KrayD,BayN,CimiottiGFritZNetai5100%ReducingAgCostandIncreasingEfficiencyMuIti-XrystallineSilinSolarCellsWithDirectplatedcontactsExceed17%EfficiencyfA.26thEuropeanPhotovoltaicSolarEnergyConferenceandExhibitionC,Hamburg,Germany,2011.4TangWLinCY,TuCHetal,50um6InnovativeDiffusionProcessforCrystallineSiliconSolarCellswithHighEfficiencyA.“processB，26thEuropeanPhotovoltaicSolarEnergyConferenceandExhibition,C,Hamburg,Germany, 2011.5 Pysch D, Mette A, Glunz S W et al, A review and comparison of different methods to deter mi ne the series resistance of solar cells Jl Solar Energy M at erials and Solar CeIlS 2007,91(18): 1698-170B(), , , ,1M.:7,.U., 2005,24(6): 10-13. 8D.:,2009.liuyuhai_01 © 2012,1987,30-195.0725505×l(fcm26×103cm23×104cm2PClD17.3%17.5%0.2%1617.3%12340.3-05%1%2012B.Sopori517.1%-17.5%717.5%m200920112GTDSS4503×104cm25×1032cm-4cmcm26×103cm2(c)l×104cm2l-2cm2-3cm3cmGB-T15542009-pn-5-5T8+10O3(a)“3(c)“3PClDPcm15.6×15.6cm20.3236.7%p+1×1019cm1000cms6606406206g580560540O10203040lifetime/us2120191817161541.5cm630mV231.5cm45*cm630mV4L5318023PE607048090100HO120352390/630mVJsc36mA,R90d29mmR90/1.76mm,88500Voc/mVIsc/AEF%627a457&517.0631a577&817.3632a6i78.817.5629a4978.817.21234PN31.5cm1-21-42-41.2-31817282612cm3.547686417.3%17.5%0.2%Jsc11d«12KT(qJ#)1XudongChen,KennethChurchetal,HighAspectRatioFineGridlineforFrontSideMetalizingofIndustialSiliconSolarCellbyDirectPrinting.26thEuropeanPhotovoltaicSolarEnergyConferenceandExhibition,2011,pl094-1098QKray,N.Bay,GCimiotti,etaReducingAgCostandIncreasingEfficiencyMuIti-CrystallineSiliconSolarCellswithDirectplatedcontactsExceed17%Efficiency.26thEuropeanPhotovoltaicSolarEnergyConferenceandExhibition,2011,pl199-1202W.C.WangCY.Iinetal,InnovativeDiffusionProcessforCrystallineSiliconSolarCellswithHighEfficiency.26thEuropeanPhotovoltaicSolarEnergyConferenceandExhibition,2011,p1299-13024 MWT1220125 BSopori,v.Budhraja,RRupnowski,sJohnston,N.Call,H.Moutinho,M.AI-Jassim,DefectClustersinMUlticrystallineSilicon:NatureandInfluenceontheSolarCellPerformanceNationalRenewableEnergyLaboratory,Golden,ColoradoUSA20096，,1220127,89304201078CHINESEJOURNALOFVACUUMSCIENCEANDTECHNOLOGY2012p341-34610.:,1985,10-173jllsjsbAl2O3-SiNxC501510006Al2O3-SiNxAI2O3Al2O385nmAhO31D团SiNx:HPECVDSiNxSiNx3.9SiNx20Si75nmAO36AO3-SiNxSiNx1.6-1.6273SiNx:H4SiNx:H8Al2。3ALD9SiNxAl2O3-SiNxSiNxAfeO3io_T7'Go-11)2cos2n0ngX一r2nS机#no=2nhcosi2=R1+(l-R1)*R2(11o+11g)2cos2AM1.5Global6.542InSZ8#=4&2o63.982.2Al2O3-SiNxMatlabAl2OjSiNx1SiNxA2O370.51.0Al2O31.6SiNx203.9SiNx80nmAM1.5Global300nm1200nmAI2O35nm200nmAI2O385nmAI2O3-SiNxa75sccm1.355%2(e)AI2O385nm400nmAbQrSiNXSiNx80nm900nm2(f)MatlabAl2O3-SiNxc75sccmSunraysd75sccm85nmAl2O3-SiNxe75sccm(f)AKM1gMS2J080«6mcanmaAQOkRmiMatlabSunraysf75sccm3.1AI2O3SAMLINKAl2O3AlAl2000W3000W50sccm75sccm5%15%25%35%45%3.23100OW25sccm102000MpOwfW)a25sccmpowf<W)b2000Wb50sccma1000W5003.3-PCDbulkSUrf111=+IneaslkT+Tsurfdiffd2_d<三-3l.surf2S2DMbulkdiffsurfmeasdDn,pS5Al2O3-SiNxSEMILrL/173.1，XAl2O3580nmSiNx200nmAO36ab6a25sccm7abcb50sccm1.HJPO11W)c75sccm7b2000W8oxygn11N2000Wxy9nrc3000Woxygnrawd91000W-3000W25sccm-75sccm5%-45%LlbJ94Al2。3MatlabAl2O3-SiNxAMI.5GlobalAhO385nmALO31000W-3000W25sccm-75sccm1 JZhaofMartinA.GreenOptimizedAntireectionCoatingsforHighrEfficiencySiIiconSolarCellsJ.IEEEtransactionsonelectrondevices;1991,vol38(N8):1925-1934.2 SGat¾EEinse工Dullwebei;RBrendeLFiringStabilityofSiNySiNxsurfacepassivationstacksforCryStallinesiliconsolarcellsR.Germany:26thEuropeanPhotovoltaicSolarEnergyConferenceandExhibition,2011.3 Dirk-HolgerNeuhaus,dolfMunzerReviewarticle:IndustrialSiliconWaferSolarCellsJ.AdvancesinOPtOEIeCtrOnic¾Volume2007,ArticleID24521.4 JZhao,AWang,P.Altermatt,andMA.GreenTwentyfourpercentefficientsiliconsolarcellswithdoublelayer:AppliedPhysicsLettesr¾1995,vol66(26):3636-363&5 nantRMokashiTaherDaudRamH.Kachare1985.SensitivityAnalysisofaPassivatedThinSiliconSolarCellUSDepartmentofEnergy.LTobas,A.ElMoussaouiandA.LuqueColoredSolarCellsWithMinimalCurrentMismatchlJ.IEEEtransactionsonelectrondevices1999,voL46(N9):1858-1869.7 CDeshpandey.1982PreparationandpropertiesofA1203filmsbydeandrfmagnetronsputtering.ThinSolidFilms,vol96(3):265-270.8 JH.Seljt=,T.T.MongstadRSondena,E.SMarstein.ReductionofopticallossesincoloredsolarcellswithmuItilayerantireectioncoatingsJ.SolarEnergyMaterials&SolarCells2011,vol95:2576-25829 Hoex,B.2008.SiliconsurfacepassivationbyatomiclayerdepositedAhO3.JournalofAppliedPhysicsvol104(Issue4):044903-044903-1210 .2007.24-27.11 .2008.Vacuum770-7412 .200aAfeO3.6:75-111.13 HorfinyiTPavelkaT,TuttoR1993BulklifetimemeasurementonsilinwithachemicallypassivatedsurfaceApplSurfSci63:306-311.14 .2006152009.ZnO1279-82lishhaomail2sysu.Cducn214028)EVAEVAEVA斗书1.2 EVA1.3 ¾设¾1.4 ¾1.5¾EVA砧砧驮1.1EVA1.6EVA砧1.7EVA0奏%外7卜欢a1EVAEVA¾32EVA/"333.37卜外,欲欲3.4EVATPT47卜7卜3.57例4战3.6袂理1SRWenham,M.GreeaPHOTOVOLTAICS型.APPLIEDMl.改200&4&1,3221,31.3.刘2烈7卜鬻由010021)北利外空7PECVD80nm650nm2%1SiO2MgF2SiNx4SiNxTa2ft7卜SiNxSiNx7卜苓¾SiNx汁叨1221W4nm(V4Q2Y=CB=/-1/«l12R=11o+YYNldN2&u#kIcosj一sinj&1#%j=iijsnjcos!先k+2jj=NdIcosA1NldlCoSel2.3P156156mm218020m1-3QcmM82200-3UMPECVD7卜2砧ndb3ca决力650nm2%33.1SE400adv-PV驾酣sentech80nm2O25nm3.2U-3400型一3860n in3.3W T-1200SEMILAB11(s)(s)(Ms)6.315 886816.055.086715.03a 585.876.555.475.58300"100nm5.706.407.201苓&43%Si-HPECVD2EFF%PmaxWUocVIbAFF%RSmRsh168104.167Q623&507&6128611a43.480nmBACCINI28.43%2&5A41奏百，,.及利SiNLJl,2002,16(3).警，7耳驾，刈.看Ul,2001,7卜22.PECVD3纸,神型M.7卜律双.200521.至当存在期初SemilabWT-1200160s190s1望L2JL3J羽翟军90酉1HIT酣徵