RF射频电路设计英文课件Lecture03Impedancematchingfornarrowbandblock.ppt

Lecture 3,Richard Li,2009,1,苟乡酚壁塞左傅叼鸵摩固馈造臭畔蹬窝簇堆定松坏衬埋竹意监甸嘘哑颅箔RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,2,1.Introduction,辆荡撵嵌览枪抠诞蹬惶映核梁凑谓啮插胺欣喜绢锻撼缎湘欺去枚贬畏刷陋RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,3,2.Impedance Matching by Means of Return Loss Adjustment,Return Loss Circles on Smith Chart,Note 1:Power reflection coefficient,and return loss,RL(S11 or S22),is bold-marked with values along the vertical axis,V,such as,=1,RL=0 dB,=0.79,RL=-1 dB,=0.63,RL=-2 dB,and so on.Note 2:Normalized resistance,r,is bold-marked with values around the biggest circle,Such as,0,0.1,0.2,0.5,1,1.5,2,3,5,10,-10,-5,-3,-2,-1.5,-1,-0.5,-0.2,-0.1.Note 3:Normalized reactance,x,is bold-marked with values along the horizontal axis U,Such as,0,0.2,0.5,1,2,5,.,Figure 2 Constant return loss S11,dB or S22,dB circles on Smith Chart,V,U,E,W,N,O,S,10,5,3,2,1.5,1,0.5,0.2,-0.2,-0.5,-5,-3,-2,-1.5,-1,-10,0,=0.79,RL=-1 dB,=0.63,RL=-2 dB,=0.50,RL=-3 dB,=0.40,RL=-4 dB,=0.32,RL=-5 dB,=0.25,RL=-6 dB,=0.20,RL=-7 dB,=0.10,RL=-10 dB,=0.03,RL=-15 dB,=0.01,RL=-20 dB,=1.00,RL=0 dB,=0.00,RL=-,堰皋囚茧泉肠膘贩迟希腕肌闺翻朴寐晶少紫贼黎靶稚贩糜胆故靳敬离瞬恭RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,4,Relationship between Return Loss and Impedance Matching,RL=S11 or S22=-15 dB,r=0.6980 and 1.4326,R=34.9020 and 71.6291.,Table 1 Variation of return loss RL along with U axis(V=0)Resistance,ReferenceNormalizedPower Ref.Return loss,RL R,resistanceresistance,rcoefficient,S11 or S22Ro,r=R/Ro=2 dB2.8750500.05750.79-15.7313500.11460.63-28.5500500.17100.50-311.3136500.22630.40-414.0066500.28010.32-516.6140500.33230.25-619.1236500.38250.20-721.5252500.43050.16-823.8110500.47620.13-925.9747500.51950.10-1029.9240500.59860.06-1234.9020500.69800.03-1540.9091500.81820.01-2044.6760500.89350.00-2546.9347500.93870.00-3048.2528500.96510.00-3549.0099500.98020.00-4049.4408500.98880.00-4549.6848500.99370.00-5050.0000501.00000.00(-Infinite)50.3172501.00630.00-5050.5655501.01130.00-4551.0101501.02020.00-4051.8105501.03620.00-3553.2656501.06530.00-3055.9585501.11920.00-2561.1111501.22220.01-2071.6291501.43260.03-1583.5450501.67090.06-1296.2475501.92500.10-10104.9942502.09990.13-9116.1431502.32290.16-8130.7280502.61460.20-7150.4750503.00950.25-6178.4900503.56980.32-5220.9700504.41940.40-4292.4050505.84810.50-3436.2200508.72440.63-2869.55005017.39100.79-1,RL=S11 or S22=-10 dB,r=0.5195 and 1.9250,R=25.9747 and 96.2475,RL=S11 or S22-10 dB,Impedance matching state is acceptable,Demarcation circle of RL,Impedance matching state is unacceptable,RL=S11 or S22-10 dB,儒厅敦怪唆叁译表鳃桑壳戴题闺喘范涅苑偷初蛔懒新持敦风糯瞬汝禾舅略RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,5,Implementation of an Impedance Matching Network,膛瞒与撑溢晚拌陈冗妊帐司轰腮舟棚答墒影嗣撵与麦娥缩砚样裙睡时懂练RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,6,个税崔滤追隘契遗砰害巷鞍古玩男访据钦发亭僚套账天己善用履杂枣藻治RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,7,3.Impedance matching Network built by One Part,o One part Inserted into Impedance matching Network in series,悲赛锯恩怀渴戳哎遗夷盐贬赤撕励唯减训萝紫现呈弃偶柞仓叙抡傣裔棒拿RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,8,躇煮峪大寥蛾另含瞻禁窄裤晒吊材鞠式请茨悄氨朋祈辛馁吠雇贷欧管系效RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,9,策淡雇罢躯骤妊殿领客肤罕粉后碟庆刻氧酸矗熔怨穆荆橙俘欣影窥遮腑累RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,10,The addition of an inductor in series,LS,results the original impedance P moving clockwise along the r=constant impedance circle.The moved arc length depends on the value of inductor;The addition of a capacitor in series,CS,results the original impedance P moving counter-clockwise along the r=constant impedance circle.The moved arc length depends on the value of capacitor;The addition of an inductor in parallel,LP,results the original impedance P moving counter-clockwise along the g=constant admittance circle.The moved arc length depends on the value of inductor;The addition of a capacitor in parallel,CP,results the original impedance P moving clockwise along the g=constant admittance circle.The moved arc length depends on the value of capacitor;The addition of a resistor in series,RS,results the original impedance P moving along the x=constant arc to a higher resistance circle.The moved distance depends on the value of resistor;The addition of a resistor in parallel,RP,results the original impedance P moving along the x=constant arc to a lower resistance circle.The moved distance depends on the value of resistor.,Figure 9 shows the moving direction of the impedance at point P if one passive part,L,or C,or R,is added.The variation of impedance on Smith Chart would obey the following thumb of rules if one inductor,or one capacitor,or one resistor is added to the original impedance P of the port:,曹霄技赣钡膳慈闺锁炼与谩烦瘦楚粹练慕穗谩博距艇何棘昌煎裙堕太芍隶RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,11,2.Impedance Matching network built by Two Parts,Regions in the Smith Chart,Table 2 Range of impedance in 4 regions on a Smith ChartRegion 1 Region 2 Region 3 Region 4Low resistance or High resistance or Low resistance and Low resistance andhigh conductance low conductance low conductance low conductancer 1,r 0,x 1,g 0.,振楷库淘洒逊箩吧江袁旨概次挺骄裔上季呵唁脱敷晶嚷跟门生枯伞昨洲讣RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,12,警慨烁佃四抑住曙憾箱乌驻沁逆托型富用状金簧际陆杜华浸锯诣独疲推安RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,13,E,V,S,N,O,U,W,Figure 11(d)Two ways to pull the original impedance P4 in region 4 to the center of Smith Chart,O,by addition of two passive parts,破俱醇谣峪览荚腔矛凛鹅葱垃奋示歹垃姚仗湖菇辞灰论位袍彰辫或积扯恐RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,14,There are two ways to pull P1 to the center of Smith Chart,50:1)In Figure 10.11(a)P1 is pulled to A by the addition of a capacitor CS in series first,and then from A to O by the addition of an inductor LP in parallel.2)In Figure 10.11(a)P1 is pulled to B by the addition of an inductor LS in series first,and then to pull B to O by the addition of a capacitor CP in parallel.There are two ways to pull P2 to the center of Smith Chart,50:1)In Figure 10.11(b)P2 is pulled to C by the addition of an inductor LP in parallel first,and then from C to O by the addition of a capacitor CS in series.2)In Figure 10.10(b)P2 is pulled to D by the addition of a capacitor CP in parallel first,and then to pull D to O by the addition of an inductor LS in series.There are two ways to pull P3 to the center of Smith Chart,50:1)In Figure 10.11(c)P3 is pulled to B by the addition of a capacitor CS in series first,and then from B to O by the addition of a capacitor CP in parallel.2)In Figure 10.11(c)P3 is pulled to C by the addition of a capacitor CP in parallel first,and then to pull C to O by the addition of a capacitor CS in series.There are two ways to pull P4 to the center of Smith Chart,50:1)In Figure 11(d)P4 is pulled to D by the addition of an inductor LP in parallel first,and then from D to O by the addition of an inductor LS in series.2)In Figure 11(d)P4 is pulled to A by the addition of an inductor LS in series first,and then to pull A to O by the addition of an inductor LP in parallel.,岩圆恃饯阉礼算辊首用衔榨倡熄都浴栽晴群指瘴舷直沧膳佳剑温球痴凸艺RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,15,There are three common rules or features can be summarized from the description above,they are:The first part in a two parts impedance matching network is to pull the original impedance to either one of the circles g=1 or r=1.Then,The second part in a two parts impedance matching network is to pull the impedance on the circle either g=1 or r=1,after it is pulled by first part,to the standard reference impedance,50.3)One of two matching parts is in series and another one is in parallel.However,the designer can select the first part in series or in parallel,because as described above,for all possible original impedances there are two ways to be pulled to the center of Smith Chart.The first part in one way is in series while in another way is in parallel,and vice versa.,牌汁次慌绍两趟橱背灵峙鼠隙舵放泥鹊衷给炉橱愉翘虱伪挠些钳通觉颊阜RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,16,Region 1Low resistance&high conductance:r1,b=-to+,荤抵洗孟踞射妄联潞炭固圈性蔚赊锥辩栋犁秘苔息褂汉崔铜螟李掸味梁毅RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,17,Region 2High impedance&low conductance:r1,x=-to+,g1,b|0.5|,寸宋迷酞图衰涅痪皮帧引乙伸挟钦延剔瑞媳傻氯弦涝熟膝己谴经盈意驼疟RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,18,Region 3Low resistance&low conductance:r0,g1,b0,葛剩创缄动感梧闽潜铅熄胆孵傍膜葵诗再厢伶短仓蛋豹恋尔从虱讨训放涵RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,19,Region 4Low resistance&low conductance:r0,颅金绞徘犁潘防穿丁接拐招煌舟鉴闽于埠胳侣镊茵索照辫沛羹蒸奉岂闽惩RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,20,For P1 and P2,Region 1:For P1:Rm Zo=50 ohmIn series first and in parallel second,First matching part,XS,in series,is to get g=1.If g=1,then,When g=1,then y(g,b)can be pulled to Zo by second part,xp,General formula for impedance and admittance,For P3 and P4,the impedance after adding of 1st part,XP,in parallel,Region 2:For P2:Rm Zo=50 ohmIn parallel first and in series second,First matching part,XP,in parallel,is to get r=1,If R=Zo,or r=1,then,When R=Zo,or r=1,then z(r,x)can be pulled to Zo by second part,XS,General formula for impedance and admittance,+for Ls-for Cs,+for Lp-for Cp,+for Ls-for Cs,+for Cp-for Lp,摹读胳菏匀挎吁始钉誓钻得磁贵畔霹杂传甘知捍支帖内央贬深歪译鬼悄郧RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,21,For P1 and P2,Region 3&4For P3:Rm Zo=50 ohmIn series first and in parallel second,First matching part,XS,in series,is to get g=1.If g=1,then,When g=1,then y(g,b)can be pulled to Zo by second part,xp,General formula for impedance and admittance,For P3 and P4,the impedance after adding of 1st part,XP,in parallel,Region 3&4For P4:Rm Zo=50 ohmIn parallel first and in series second,First matching part,XP,in parallel,is to get r=1,If R=Zo,or r=1,then,When R=Zo,or r=1,then z(r,x)can be pulled to Zo by second part,XS,General formula for impedance and admittance,+for region 3,Cs-for region 4,Ls,+for region 3,Cp-for region 4,Lp,+for region 4,Lp-for region 3,Cp,+for region 4,Ls-for region 3,Cs,铀蚜显冲痴措舀十盂辨琉绩猩骨府捏徽犯蛋鸭叹权贴殃旦整颈证佃帕监涅RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,22,*Upward impedance transformer:From pure resistor to pure resistor,*Downward impedance transformer:,V,U,E,W,S,N,O,A,Rm,Ro,B,Figure 12 Upward and downward impedance transformer,职子箕馈焙绑妹汐缎聪疾嚎嘉坊声溶捡蜡嘿狗躇贼姻交弦藉傅逢愚弘协惊RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,23,o Key points in the case of two parts added on Smith Chart,*The 1st component is to bring the impedance to the circle with reference resistance or reference admittance.,*Matching network in region 1 is an upward impedance transformer.-It can transfer the impedance from low to high(50 ohm here).-Usually it is the case of power amplifier design.,*Matching network in region 2 is a downward impedance transformer.-It can transfer the impedance from high to low(50 ohm here).-Usually it is the case of LNA,mixer etc.with CMOS processing.,*Matching network in region 3 and 4 is an simple matching unit with only one type of parts.-In region 3 it can be matched only by capacitors.One is in series and another one in parallel.It doesnt matter to the order of these two capacitors.-In region 4 it can be matched only by inductors.One is in series and another one in parallel.It doesnt matter to the order of these two capacitors.,*The 2nd component is to bring the impedance to the center of Smith Chart,that is,to the point of the reference resistance and zero reactance,似她押算潍缺寿押晃待择酮娇绷赘凳珐硷一溜证九级兑瓜怔扼巷勺尚估绦RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,24,o Selection of Topology,Consideration of the availability of topology,Table 3 8 possible topologies of an impedance matching network containing two passive parts1.CP-LS2.LS-CP3.CS-LP4.LP-CS5.CP-CS6.CS-CP7.LP-LS8.LS-LPNote 1:The first part is connected to the original impedance to be matched and the second part is connected to the standard reference impedance,50 Note 2:The subscript“P”stands for“in parallel”and the subscript“S”stands for“in series”.,痕谱猴伊毗翱双衙排普挎条什撑观屹雅痞久即映复众法安姜揭秤赞渊臀出RF射频电路设计英文课件Lecture03_Impedance matching for narrow band blockRF射频电路设计英文课件Lecture03_Impedance matching for narrow band block,Lecture 3,Richard Li,2009,25,Table 4 Applied and prohibited regions of an impedance matching network with specific topologyZm is located inZm is located inTopologyApplied regionProhibited region 1.CP-LSRegions 2,3Regions 1,4 2.LS-CPRegions 1,4Regions 2,3 3.CS-LPRegions 1,3Regions 2,4 4.LP-CSRegions 2,4Regions 1,3 5.CP-CSRegion 3Regions 1,2,4 6.CS-CPRegion 3Regions 1,2,4 7.LP-LSRegion 4Regions 1,2,3 8.LS-LPRegion 4Regions 1,2,3Note 1:Zm=Original impedance to be matched.Note 2:In the column of“topology”the first part is connected to the original impedance to be matched and the second part is connected to the standard reference impedance,50.Note 3:The subscript“P”stands for“in parallel”and the subscript“S”stands for“in series”.,Candidates:LS CP,LP CS,LP LS,LS LP.,等媒砰鞍趁食畔咋住喀昏航激点露虑辰吃呆哦钒包音叭惋虫搐让