CMOS双阱工艺技术课件.ppt
CMOS工艺技术,CSMC-HJ,Wafer FabricationProcessTechnology,CMOS,CMOS,Starting with a silicon wafer,Cross Section of the Silicon Wafer,Magnifying the Cross Section,CMOS,n/p-well Formation,Grow Thin Oxide,Deposit Nitride,Deposit Resist,silicon substrate,UV Exposure,Develop Resist,Etch Nitride,n-well Implant,Remove Resist,CMOS,n/p-well Formation,silicon substrate,Grow Oxide(n-well),Remove Nitride,p-well Implant,Remove Oxide,Twin-well Drive-in,Remove Drive-In Oxide,CMOS,LOCOS Isolation,Grow Thin Oxide,Deposit Nitride,Deposit Resist,UV Exposure,Develop Resist,Etch Nitride,Remove Resist,CMOS,LOCOS Isolation,Deposit Resist,UV Exposure,Develop Resist,Field Implant B,Remove Resist,Grow Field Oxide,Remove Nitride,Remove Oxide,Grow Screen Oxide,CMOS,Transistor Fabrication,Vt Implant,Deposit Resist,UV Exposure,Develop Resist,Punchthrough Implant,Remove Resist,Remove Oxide,Fox,Grow Gate Oxide,CMOS,Transistor Fabrication,Deposit PolySi,PolySi Implant,Deposit Resist,UV Exposure,Develop Resist,Etch PolySi,Remove Resist,Fox,CMOS,Transistor Fabrication,Deposit Thin Oxide,Deposit Resist,UV Exposure,Develop Resist,n-LDD Implant,Remove Resist,Fox,polySi,polySi,CMOS,Transistor Fabrication,Deposit Resist,UV Exposure,Develop Resist,p-LDD Implant,Remove Resist,Deposit Spacer Oxide,Etch Spacer Oxide,Fox,polySi,polySi,CMOS,Transistor Fabrication,Deposit Resist,UV Exposure,Develop Resist,n+S/D Implant,Remove Resist,Fox,polySi,polySi,CMOS,Transistor Fabrication,Deposit Resist,UV Exposure,Develop Resist,p+S/D Implant,Remove Resist,Fox,polySi,polySi,n+,n+,CMOS,Contacts&Interconnects,Deposit BPTEOS,BPSG Reflow,Planarization Etchback,Deposit Resist,UV Exposure,Develop Resist,Contact Etchback,Remove Resist,Fox,polySi,polySi,n+,n+,p+,p+,CMOS,Contacts&Interconnects,Depost Metal 1,Deposit Resist,UV Exposure,Develop Resist,Etch Metal 1,Remove Resist,Fox,polySi,polySi,p+,p+,n+,n+,BPTEOS,CMOS,Contacts&Interconnects,Deposit IMD 1,Deposit SOG,Planarization Etchback,Deposit Resist,UV Exposure,Develop Resist,Via Etch,Remove Resist,Fox,polySi,polySi,p+,p+,Metal 1,n+,n+,BPTEOS,CMOS,Contacts&Interconnects,Deposit Metal 2,Deposit Resist,UV Exposure,Develop Resist,Etch Metal 2,Remove Resist,Deposit Passivation,Fox,polySi,polySi,p+,p+,Metal 1,n+,n+,BPTEOS,IMD1,SOG,附：CMOS Process,CMOS工艺集成电路,CMOS集成电路工艺-以P阱硅栅CMOS为例,1。光刻I-阱区光刻，刻出阱区注入孔,N-Si,N-Si,SiO2,CMOS集成电路工艺-以P阱硅栅CMOS为例,2。阱区注入及推进，形成阱区,N-Si,P-,CMOS集成电路工艺-以P阱硅栅CMOS为例,3。去除SiO2，长薄氧，长Si3N4,N-Si,P-,Si3N4,CMOS集成电路工艺-以P阱硅栅CMOS为例,4。光II-有源区光刻,N-Si,P-,Si3N4,CMOS集成电路工艺-以P阱硅栅CMOS为例,5。光III-N管场区光刻，N管场区注入，以提高场开启，减少闩锁效应及改善阱的接触。,光刻胶,CMOS集成电路工艺-以P阱硅栅CMOS为例,6。光III-N管场区光刻，刻出N管场区注入孔；N管场区注入。,CMOS集成电路工艺-以P阱硅栅CMOS为例,7。光-p管场区光刻，p管场区注入，调节PMOS管的开启电压，生长多晶硅。,CMOS集成电路工艺-以P阱硅栅CMOS为例,8。光-多晶硅光刻，形成多晶硅栅及多晶硅电阻,多晶硅,CMOS集成电路工艺-以P阱硅栅CMOS为例,9。光I-P+区光刻，P+区注入。形成PMOS管的源、漏区及P+保护环。,CMOS集成电路工艺-以P阱硅栅CMOS为例,10。光-N管场区光刻，N管场区注入，形成NMOS的源、漏区及N+保护环。,CMOS集成电路工艺-以P阱硅栅CMOS为例,11。长PSG（磷硅玻璃）。,CMOS集成电路工艺-以P阱硅栅CMOS为例,12。光刻-引线孔光刻。,CMOS集成电路工艺-以P阱硅栅CMOS为例,13。光刻-引线孔光刻（反刻AL）。,集成电路中电阻1,基区扩散电阻,集成电路中电阻2,发射区扩散电阻,集成电路中电阻3,基区沟道电阻,集成电路中电阻4,外延层电阻,集成电路中电阻5,MOS中多晶硅电阻,其它：MOS管电阻,集成电路中电容1,发射区扩散层隔离层隐埋层扩散层PN电容,集成电路中电容2,MOS电容,
