IGBT 各种参数解释.docx

IGBT 各种参数解释The graphical symbol as shown below is used in this edition of IEC 60747-9. 1.N-channel IGBT IGBT that has one or more N-type conduction channels See IEV 521-05-06. P-channel IGBT 2. IGBT that has one or more P-type conduction channels See IEV 521-04-05. collector-emitter voltage with gate-emitter short-circuited 3.VCES collector-emitter voltage at which the collector current has a specified low (absolute) value with gate-emitter short-circuited gate-emitter threshold voltage 3.1 VGES Gate-emitter voltages with collector emitter short circuit Maximum positive and negative values. 4.VGE(th) gate-emitter voltage at which the collector current has a specified low (absolute) value 5.safe operating area SOA collector current versus collector emitter voltage where the IGBT is able to turn-on and turn- off without failure 6. turn-on time ton sum of the turn-on delay time and the rise time 7. turn-off time toff sum of the turn-off delay time and the fall time Figure 1 Circuit for measuring the collector-emitter voltages VCES, VCER, VCEX VCC and VGG are the voltage supply. R1 is a circuit protection resistor. The specified conditions between gate and emitter shall be applied. The collector-emitter voltage is set to the specified value. 8.Specified conditions .Collector-emitter voltage VCE Ambient or case or virtual junction temperature Ta or Tc or Tvj VCEX: gate-emitter voltage VGG VCER: resistor connected between gate and emitter VCES: short circuit between gate and emitter 9.Circuit for measuring the variation with temperature of the collector- emitter voltage VCE at a low measuring current IC1 and for heating up the IGBTby a high current IC2 A current source supplies a low continuous direct collector current IC1 which is just sufficient to raise the collector-emitter voltage VCE above the saturation value. An electronic power switch S supplies on top of IC1 a high collector current IC2. After switching IC2 off, the IGBT returns to the IC1 conduction. R2 is a current measuring resistor. In its place, any other appropriate current probe may be used. a) Determination of the temperature coefficient VCE of the collector-emitter voltage VCE at the low measuring current IC1 (see Figure 28). The IGBT to be measured is heated subsequently to the temperatures T1 and T2 by immersing it in a heated chamber or inert fluid. Thermal equilibrium must be achieved before measurements are taken. At temperature T1 the collector-emitter voltage at the measuring current IC1 is VCE1. At a higher temperature T2 it is VCE2. Then the temperature coefficient VCE is: Figure 28 Typical variation of the collector-emitter voltage VCE at a low measuring current IC1 with the case temperature Tc (when heated from outside, i.e. Tc= Tvj) b) Measurement of the response to a step change in the internal power dissipation The IGBT to be measured is fixed on a suitable heatsink. The case temperature Tc1 is easured. At that temperature, the measuring current produces the collector-emittervoltage VCE3. The power switch S is switched on. The high collector current IC2flows.When thermal equilibrium is established, Tc= const. = Tc2and VCE= VCE4are measured. Now IC2is switched off. Immediately after switch-off, the collector-emitter voltage at IC1is measured to be VCE5. Then at that instant If the transient thermal impedance Zth(j-c)is to be determined, the variations with time of VCEat IC1and of Tcduring the cooling period after switching off IC2are plotted, and the Zth(j-c)values are calculated point by point using the above equations.